MAT04EY Search Results

Contextual Info: MAT04EY Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

MAT04

Abstract: MAT04FS MAT04EY MAT04FP MAT04FY amplifier "current mirror" tpc single transistor amplifier circuits MAT-04
Contextual Info: a FEATURES Low Offset Voltage: 200 ␮V max High Current Gain: 400 min Excellent Current Gain Match: 2% max Low Noise Voltage at 100 Hz, 1 mA: 2.5 nV/√Hz max Excellent Log Conformance: rBE = 0.6 ⍀ max Matching Guaranteed for All Transistors Available in Die Form

Contextual Info: MAT-04 PMI M ATCH ED MONOLITHIC Q UAD TRANSISTOR P re c isio n M o n o lith ic s Inc PIN CONNECTIONS FEATURES • • • • • • • Low Offset Voltage . 200|xV Max High Current Gain . 400 Min

Contextual Info: Matched Monolithic Quad Transistor MAT-04 ANALOG ► DEVICES PIN C O N N EC TIO N S FEA TU RES • • • • • • • Low Offset Voltage. 200^V Max High Current G a in . 400 Min

C3130

Abstract: MAT04AY MAT04EY MAT04FP MAT04FY MAT04 MAT-04AY
Contextual Info: a FEATURES Low Offset Voltage: 200 ␮V max High Current Gain: 400 min Excellent Current Gain Match: 2% max Low Noise Voltage at 100 Hz, 1 mA: 2.5 nV/√Hz max Excellent Log Conformance: rBE = 0.6 ⍀ max Matching Guaranteed for All Transistors Available in Die Form

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

Contextual Info: a FEATURES Low Offset Voltage: 200 ␮V max High Current Gain: 400 min Excellent Current Gain Match: 2% max Low Noise Voltage at 100 Hz, 1 mA: 2.5 nV/√Hz max Excellent Log Conformance: rBE = 0.6 ⍀ max Matching Guaranteed for All Transistors Available in Die Form

Contextual Info: ANALOG D EV IC ES FEATURES Low O ffset V o lta g e : 200 jiV m ax High C u rren t G ain: 400 min Excellent C u rren t G ain M atc h : 2% m a x _ Low N o ise V o lta g e at 100 Hz, 1 m A : 2.5 n V /^ H z m ax Excellent Log C o n form an ce: rBE = 0.6 i l m ax

Contextual Info: Matched Monolithic QuadTransistor MAT04 ANALOG DEVICES □ PIN CONNECTIONS FEATURES • • • • • • • Low Offset Voltage. 200nV Max High Current G ain. 400 Min

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

in748a

Abstract: IN748 IN748a diode BY55C NPN transistor 2n2222 beta value MAT-04 MAT04AY MAT-04AY MAT04BY MAT04EY
Contextual Info: Matched Monolithic Quad Transistor MAT-04 ANALOG ► DEVICES PIN CONNECTIONS FEATURES • • • • • • • Low Offset V o lta g e . 200^V Max High Current G a in . 400 Min

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

MAT matched transistors

Abstract: voltage-controlled attenuator
Contextual Info: Matched Monolithic Quad Transistor MAT-04 ANALOG ► DEVICES PIN C O N N EC TIO N S FEA TU RES • • • • • • • Low Offset Voltage. 200^V Max High Current G a in . 400 Min

Contextual Info: Matched Monolithic Quad Transistor MAT-04 ANALOG ► DEVICES PIN CONNECTIONS FEATURES • • • • • • • Low Offset V o lta g e . 200^V Max High Current G a in . 400 Min