MASW6010 Search Results

Contextual Info: « liM P A M V W iy GaAs SPDT Switch DC-6 GHz MASW6010G V 2.00 • ■ ■ ■ Low Insertion Loss, 0.5 dB Typical @ 4 GHz Fast Switching Speed, 4ns Typical Ultra Low DC Power Consumption Integral Static Protection Guaranteed Specifications* @25°C * * * Frequency Range

MASW6010G

Contextual Info: MASW6010G GaAs SPDT Switch DC - 6.0 GHz Rev. V6 Features Pad Layout • Low Insertion Loss: 0.5 dB Typical @ 4 GHz • Fast Switching Speed: 4 ns Typical • Ultra Low DC Power Consumption Description M/A-COM Technology’s MASW6010G is an SPDT GaAs MESFET MMIC. This part combines small

GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

Abstract: MASW6010G
Contextual Info: GaAs SPDT Switch DC - 6.0 GHz MASW6010G V4 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 ns Typical Ultra Low DC Power Consumption Integral Static Protection RFC GND GND RF1 RF2 A B Description M/A-COM’s MASW6010G

Contextual Info: GaAs SPDT Switch, DC - 6.0 GHz MASW6010G V3 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 ns Typical Ultra Low DC Power Consumption Integral Static Protection RFC GND GND RF1 RF2 A B Description M/A-COM’s MASW6010G

MASW6010G

Contextual Info: GaAs SPDT Switch DC - 6.0 GHz MASW6010G V5 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 nS Typical Ultra Low DC Power Consumption Integral Static Protection Description M/A-COM’s MASW6010G is an SPDT GaAs

MASW6010

Abstract: MASW6010G
Contextual Info: GaAs SPDT Switch DC-6 GHz MASW6010G V 2.00 • ■ ■ ■ Low Insertion Loss, 0.5 dB Typical @ 4 GHz Fast Switching Speed, 4ns Typical Ultra Low DC Power Consumption Integral Static Protection Guaranteed Specifications* @25°C* Frequency Range DC - 6000

MASW6010G

Contextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents GaAs SPDT Switch DC - 6.0 GHz MASW6010G V5 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 nS Typical Ultra Low DC Power Consumption

Contextual Info: M an A M P com pany GaAs SPDT Switch DC-6 GHz MASW6010G V 2.00 • ■ ■ ■ L ow I n s e r t io n Loss, 0.5 d B T y p ic a l @ 4 G H z Fast S w itc h in g S p e e d , 4 n s T yp ical Ultra Low DC P o w e r C o n s u m p t i o n Integ ra l Static P ro te c tio n

Contextual Info: jy t e c c m GaAs SPDT Switch D C -6 GHz • ■ ■ ■ MASW6010G Low Insertion Loss, 0.5 dB Typical Fast Switching Speed, 4ns Typical Ultra Low DC Power Consumption Integral Static Protection Guaranteed Specifications* @25°C*

M517

Abstract: MASW6010 54LS04 MESFET
Contextual Info: Application Note MASW6010* GaAs SPDT MMIC Switch Performance and Driver Circuit Techniques MMIC SPDT Switch Design MASW6010 RF The MASW6010 is based on the use of MetalSemiconductor Field Effect Transistors MESFET as the active elements. As shown in the schematic of Figure la,

GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

Abstract: MASW6010G
Contextual Info: MASW6010G V GaAs SPDT Switch DC - 6.0 GHz Rev. V5 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 4 GHz Fast Switching Speed: 4 nS Typical Ultra Low DC Power Consumption Integral Static Protection Description M/A-COM’s MASW6010G is an SPDT GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It

DM74SL04

Abstract: IC DM74LS04 SW109 SW-109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419 SWD-119
Contextual Info: S2079 Application Note Drivers for GaAs FET Switches And Digital Attenuators Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs

Techniques to Achieve High Isolation with GaAs MMIC Switch Chips

Abstract: SW-210 mmic A MASW6010G MASW6020G SW-200
Contextual Info: Techniques to Achieve High Isolation with GaAs MMIC Switch Chips Mounting Techniques 1. Mount the base of the chip directly on the ground plane i.e. the metal floor of the package and use short connections from the ground pads of the MMIC to the ground plane.

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM

Drivers for GaAs FET Switches and Digital Attenuators

Abstract: SW SPDT rf attenuator 349 SW-109 ttl and cmos digital ic DC bias of gaas FET IC DM74LS04 DM74SL04 motorola diode 8296 SW-437
Contextual Info: Drivers for GaAs FET Switches and Digital Attenuators S2079 V4 Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application

PH1819-60

Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Contextual Info: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies

SPDT FETs

Abstract: DR65-0001 SWD-119 small signal GaAs FET SW SPDT AT-220 MASW4030G MASW6010G SW-313 SWD-109
Contextual Info: An ASIC Driver for GaAs FET Control Components This application note covers driver selection and circuit design for FET switches and attenuators, including non-linear performance as Vopt is varied By Christopher Weigand M/A-COM, Inc. he use of a plastic packaged ASIC driver

MAAM-008863

Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Contextual Info: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America

GaAs MMIC Based Control Components with Integral Drivers

Abstract: RF MESFET S parameters DC bias of gaas FET MESFET MASW6010 GaAs MesFET Application note transistor mesfet
Contextual Info: GaAs MMIC Based Control Components with Integral Drivers M537 V4 Introduction This application note describes the fundamental operation and features of a new series of control components. These switches comprise a family of devices that use GaAs FET MMIC technology for the