MASW2000 Search Results

MASW2000

Contextual Info: GaAs SPDT Switch DC - 3 GHz MASW2000 V 2.00 Features ● ● ● ● Low Insertion Loss, 0.5 dB Typical @ 2 GHz Fast Switching Speed, 22 ns Typical Reflective/Absorptive Configuration Ultra Low DC Power Consumption Guaranteed Specifications* -55°C to +85°C

MASW2000

Abstract: Au Sn eutectic
Contextual Info: MASW2000 GaAs SPDT Switch DC - 3.0 GHz Rev. V4 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 2 GHz Fast Switching Speed: 22 ns Typical Reflective/Absorptive Configuration Ultra Low DC Power Consumption A1 B2 RF B1 A2 Description

Contextual Info: GaAs SPDT Switch, DC - 20 GHz MASW20000 V3 Features • • • • • • • Pad Layout Very Broadband Performance Low Insertion Loss: 1.75 dB Typical @ 20 GHz High Isolation: 50 dB Typical @ 18 GHz Fast Switching Speed: 2 ns Typical Reflective Configuration

Contextual Info: Afa GaAs SPDT Switch DC-20 GHz MASW20000 Features • Very Broadband Performance • Low Insertion Loss, 1.75 dB Typical @ 18 GHz • High Isolation, 50 dB Typical @ 18 GHz • Fast Switching Time, 2 nS Typical • Reflective Configuration • Ultra Low DC Power Consumption

MASW20000

Abstract: DC-10 DC-20 MASW2000 0035-X
Contextual Info: GaAs SPDT Switch DC - 20 GHz MASW20000 GND Features ● ● ● ● ● ● ● Very Broadband Performance Low Insertion Loss, 1.75 dB Typical @ 18 GHz High Isolation, 50 dB Typical @ 18 GHz Fast Switching Time, 2 nS Typical Reflective Configuration Ultra Low DC Power Consumption

Contextual Info: >flfrCC4ì GaAs SPDT Switch DC-3 GHz MASW2000 * Low Insertion Loss, 0.5 dB Typical @ 2 GHz * Fast Switching Speed, 22 ns Typical • Reflective/Absorptive Configuration • Ultra Low DC Power Consumption

MASW2000

Contextual Info: GaAs SPDT Switch, DC - 3.0 GHz MASW2000 V4 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 2 GHz Fast Switching Speed: 22 ns Typical Reflective/Absorptive Configuration Ultra Low DC Power Consumption A1 B2 RF B1 A2 Description M/A-COM’s MASW2000 is a use-configuratble, high

Contextual Info: GaAs SPDT Switch, DC - 3.0 GHz MASW2000 V3 Features • • • • Pad Layout Low Insertion Loss: 0.5 dB Typical @ 2 GHz Fast Switching Speed: 22 ns Typical Reflective/Absorptive Configuration Ultra Low DC Power Consumption A1 B2 RF B1 A2 Description M/A-COM’s MASW2000 is a use-configuratble, high

MASW20000

Contextual Info: GaAs SPDT Switch DC - 20 GHz MASW20000 V4 Features • • • • • • • Pad Layout Very Broadband Performance Low Insertion Loss: 1.75 dB Typical @ 18 GHz High Isolation: 50 dB Typical @ 18 GHz Fast Switching Speed: 2 ns Typical Reflective Configuration

Contextual Info: jt fkm a ncA M P m com pany GaAs SPDT Switch DC - 3 GHz MASW2000 V 2.00 Features At • L o w In s e rtio n Loss. 0.5 d B T y p ic a l @ 2 G H z • Fast S w itc h in g S peed, 22 ns T y p ic a l • Refk*c t i \ f A h s o r p ti\f C o n fig u ra tio n B2

MASW20000

Contextual Info: MASW20000 GaAs SPDT Switch DC - 20 GHz Rev. V5 Features • • • • • • • Very Broadband Performance Low Insertion Loss: 1.75 dB Typical @ 18 GHz High Isolation: 50 dB Typical @ 18 GHz Fast Switching Speed: 2 ns Typical Reflective Configuration Ultra Low DC Power Consumption

Contextual Info: «n A M PA M Vuny GaAs SPDT Switch DC - 20 GHz MASW20000 GND Features • • • • • • • t Very Broadband Performance Low Insertion Loss, 1.75 dB Typical @ 18 GHz High Isolation, 50 dB Typical @ 18 GHz Fast Switching Time, 2 nS Typical Reflective Configuration

masw20000

Contextual Info: MASW20000 GaAs SPDT Switch DC - 20 GHz M/A-COM Products Rev. V5 Features • • • • • • • Very Broadband Performance Low Insertion Loss: 1.75 dB Typical @ 18 GHz High Isolation: 50 dB Typical @ 18 GHz Fast Switching Speed: 2 ns Typical Reflective Configuration

Contextual Info: Mfì A A U *e a m fìM n y GaAs SPDT Switch DC - 3 GHz MASW2000 V 2.00 Features • • • • Low Insertion Loss, 0.5 dB Typical @ 2 GHz Fast Switching Speed, 22 ns Typical Reflective/Absorptive Configuration Ultra Low DC Power Consumption Guaranteed Specifications* -55°c to +85°c

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM

PH1819-60

Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Contextual Info: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies

MAAM-008863

Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Contextual Info: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America