M5365 Search Results

Contextual Info: SAM S UN G E L E C T R O N I C S b?E » INC • 7 ^ 4 1 4 2 0015052 IHh ■ SN6K KM M536512C/CG DRAM MODULES 5 1 2K X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S a m su n g KM M 536512C is a 512K b it x 36 Dynamic RAM high density memory module. The Sam­

Contextual Info: KM M536512C/CG DRAM MODULES 5 1 2 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M536512C is a 512K b it x 36 Dynamic RAM high density memory module. The Sam­ sung M536512C consist of sixteen CMOS 256K x 4

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M5365 Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 20 (7/28) AWG TC 0.038 b) Insulation 0.016" Wall, Nom. PVC

Contextual Info: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^4 1 4 5 M536512W/WG 0 D1 5 2 1 5 54T ■ SMGK DRAM MODULES 512KX36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C M536512W-6 60ns 15ns 110ns M536512W-7 70ns 20ns

coaxial cable awm 1354

Abstract: AWM 2498 M39024/11
Contextual Info: Manhattan Electrical Cable Alpha Wire | www.alphawire.com | 1-800-52 ALPHA Specifications subject to change. For complete specifications and availability, visit www.alphawire.com. 141 Manhattan™ Electrical Cable Signal transmission made reliable A lpha Wire’s Manhattan

Contextual Info: M536512W/WG DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M536512W is a 512K bit x 36 Dynam­ ic RAM high density memory module. The Samsung M536512W consist of four CMOS 2 5 6K x18 bit

samsung LRA

Contextual Info: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK M536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung

M5916

Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
Contextual Info: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

Contextual Info: M536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M536512W3 is a 512K bit x 36 Dynamic RAM high density memory module. The Samsung M536512W3 consist of four CMOS 2 5 6K x18 bit