LN62S Search Results

Contextual Info: Panasonic Infrared Light Emitting Diodes LN62S G aAs Infrared Light Em itting Diode For optical control systems This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers. • Features • High-power output, high-efficiency : PQ = 3.5 mW typ.

LN62S

Abstract: PN120S PNZ120S
Contextual Info: Phototransistors PNZ120S PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use

"Photo Interrupter"

Abstract: OPTICAL INTERRUPTER LN62S PN123S
Contextual Info: Panasonic Phototransistors PN123S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an photo interrupter • Features • High sensitivity • Low dark current • Fast response : tr = 3.5 |^s typ. • Small size (0 3) ceramic package

PN120S

Abstract: LN62S
Contextual Info: Panasonic Phototransistors PN120S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an optical controller • Features • H igh sensitivity • W ide directio n al sensitivity fo r easy use • F a st re sp o n se : tr, tj = 3 |xs typ.

Contextual Info: Panasonic Phototransistors PN123S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an photo interrupter • Features • H ig h sensitivity • L ow d ark cu rren t • F a st re sp o n se : tr = 3.5 |^s typ. • S m all size (0 3) ceram ic pack ag e

Contextual Info: Panasonic Infrared Light Emitting Diodes LN62S G aAs Infrared Light Emitting Diode For optical control systems This product can be com bined with various types o f silicon photodetectors such as the PN120S to form optical controllers. • Features • H igh-pow er output, high-efficiency : P Q = 3.5 m W typ.

"Photo Interrupter" Application Note

Abstract: LN62S PN123S PNZ123S
Contextual Info: Phototransistors PNZ123S PN123S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.)

Contextual Info: Phototransistors PNZ0120 Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use Fast response : tr, tf = 3 µs typ.

Contextual Info: Panasonic Phototransistors PN120S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an optical controller • Features • • • • H igh sensitivity W ide directional sensitivity for easy use Fast response : tr, % = 3 jlls typ.

Contextual Info: Phototransistors PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller M Di ain sc te on na tin nc ue e/ d Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use

Infrared Emitting Diode

Abstract: panasonic 8090 LN62S PN120S GaAs 850 nm Infrared Emitting Diode
Contextual Info: Panasonic Infrared Light Emitting Diodes LN62S GaAs Infrared Light Emitting Diode For optical control systems This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers. • Features • High-power output, high-efficiency : P0 = 3.5 mW typ.

Contextual Info: Infrared Light Emitting Diodes LN62S GaAs Infrared Light Emitting Diode Unit : mm For optical control systems ø3.0±0.15 M Di ain sc te on na tin nc ue e/ d 3.75±0.3 2.0±0.2 This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers.

zjy 2b

Abstract: IT9010 LN62S PN120S PN121S PN123S T-9856 UCA 1400
Contextual Info: PANASONIC INDL/ELEK-CSEMI} 7SC D | bT3SflSM □ O O c!flfll4 fl | _ 6 9 3 2 8 52 P ANASONIC IN D L * ELECTRONIC 72C 0 9 8 8 4 D PN120S PN120S I- H I - G l '> ij u y NPN rhh / S i NPN Phototransistor Optical Control Systems LN62S £<7 Mfrnt>-&T'7i-s h -f Matched

LN62S

Abstract: PNZ123S
Contextual Info: Phototransistors PNZ123S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Low dark current Fast response : tr = 3.5 µs typ.

L2683-01

Abstract: SE314 122dl 18AF tokin 473 5.5v SE306 SE307-C SE308 SE313 SE3161L
Contextual Info: - • it ¥ H it U tl £ Po min imW f t 14 tSL f t If Ik I f n = 25*0 (T„=25*C ) WS W f± ; t- 4^ # : f t I f Xp /iSIEiiS if- is. m I f Pi> m * T„pr (m A) min!mW'sr' (mA) ty p (V) m a x (V) (m A) ty p (nm) ty p (deg) (m A) (m W ) rc ) - - 0.2 10 1.1

LNC703PS

Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli­ cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

LT3SA

Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40

LN9705

Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli­ cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1

OLD232

Abstract: OLD122 OLD222 TLR215A 122dl 18AF 1kl3 OLD223 OLD123 OLD124
Contextual Info: -2 2 1 'ä • 'Jt M £ n 1 t tH tr r, Kt Po min 'mW: ¡m A 1 OLD122 3.4 100 OLD123 2.4 100 OLD124 2.0 60 OLD125 1.0 OLD127 0.3 öt1 14 Hfl & s 'T „ = 2 o c > 17^, - 25 C ! «L Q-'- V m if- t- m n Xp d\ I f Pi> mW1 St iffi ffi n T„Pr i.mA! ty p V

SLR-981A

Abstract: SLR-932A SLR-938C GL360 l30 tf 125 SLR981A SLR-889C SLR-935A 122dl L146
Contextual Info: 223- - * m. & % i. iti t l m •± n Po I f IE I f { r „ = 2 5 ic X „ = 25°C) ft m n t 5* m . ne ui V * I f Xr m gf] 1T- m I f Po 1% 51- m 1S m in 1mW) (m A ) min(mW'sr) (m A ) t y p (V ) (m A ) t y p (n m ) (m A ) (m W ) CC) S L R -9 3 2 A t y p 7 .5

SIH-55SB3F

Abstract: SIR-56SB3 122dl L-117 L-119 LN155 LN175 LN189L LN57 LN58
Contextual Info: 229- - n. % • ± s; £ LN 58 tt & i t ¿fe t¡ £ T & w 14 m « r± * m n m & is. m mWM. ft Xp 0 2 I F Pd T„pr m a x V ty p (n m ) t y p fd e g ) (ra A ) im W ) rc > 1 .5 50 950 ±35 50 75 - L -1 1 6 - 1 .5 50 950 ±18 50 75 - L -1 1 7 I f im A ' 1 .8

TO44 package

Abstract: 09846 09843 LN61C LN62S LN65 PN120S infrared 950nm PU160 PANASONIC FL
Contextual Info: PANASONIC INDL/ELEK-CSEMI}. 72C D | t.=]32fi54 DOCHaqS 3 | 6932852 PANASONIC IN DL * E L E C T R O N IC 7T 7 K E U ? h D - " J O ? ! W 72C 0 9 84 2 _ ~ X D _ IN61C LN61C T- G aA s K / G a A s Infrared Light Em itting Diode Optical Control Systems

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.