PN120S Search Results

Contextual Info: Panasonic Infrared Light Emitting Diodes LN62S G aAs Infrared Light Em itting Diode For optical control systems This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers. • Features • High-power output, high-efficiency : PQ = 3.5 mW typ.

LN62S

Abstract: PN120S PNZ120S
Contextual Info: Phototransistors PNZ120S PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use

PN120S

Abstract: LN62S
Contextual Info: Panasonic Phototransistors PN120S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an optical controller • Features • H igh sensitivity • W ide directio n al sensitivity fo r easy use • F a st re sp o n se : tr, tj = 3 |xs typ.

Contextual Info: Panasonic Infrared Light Emitting Diodes LN62S G aAs Infrared Light Emitting Diode For optical control systems This product can be com bined with various types o f silicon photodetectors such as the PN120S to form optical controllers. • Features • H igh-pow er output, high-efficiency : P Q = 3.5 m W typ.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type Unit: mm For optical control systems 3.75±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use

PT-103

Abstract: PH110 PT108A pt77 PH114 PH109 PN101 PN101F PT-101 PT-102
Contextual Info: - 288- I 1'J PT108A FH109 PH110 rn n ^ PH1161L PT8L PN101 PN101F PN102F PN102 PN106 PN107 PN108 PN107F PN108F PN10SCL PN109CL PN109F PN109L PN 110 PN111W PN115 PN116 PN120S PN121S PN123S PN126S PN127 PN147 £ tfc B & it & II min mA 'S 0.2 10 0.2 0.04 0.04

PN120S

Abstract: PNZ120S
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type For optical control systems • Features  High sensitivity  Wide directivity characteristics for easy use  Fast response: tr , tf = 3 s (typ.)

Contextual Info: Phototransistors PNZ120S PN120S Silicon planar type Unit: mm For optical control systems 3.75±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use • Fast response: tr , tf = 3 µs (typ.) • Signal mixing capability using base pin

Contextual Info: Panasonic Phototransistors PN120S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an optical controller • Features • • • • H igh sensitivity W ide directional sensitivity for easy use Fast response : tr, % = 3 jlls typ.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ120S (PN120S) Silicon planar type Unit: mm For optical control systems 4.1±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use

Contextual Info: Phototransistors PNZ120S PN120S Silicon planar type Unit: mm For optical control systems 4.1±0.3 • Features 12.5 min. • High sensitivity • Wide directivity characteristics for easy use • Fast response: tr , tf = 3 µs (typ.) • Signal mixing capability using base pin

Contextual Info: Phototransistors PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller M Di ain sc te on na tin nc ue e/ d Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use

LN62S

Abstract: PN120S
Contextual Info: Phototransistors PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 For optical control systems 12.5 min. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo

Infrared Emitting Diode

Abstract: panasonic 8090 LN62S PN120S GaAs 850 nm Infrared Emitting Diode
Contextual Info: Panasonic Infrared Light Emitting Diodes LN62S GaAs Infrared Light Emitting Diode For optical control systems This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers. • Features • High-power output, high-efficiency : P0 = 3.5 mW typ.

zjy 2b

Abstract: IT9010 LN62S PN120S PN121S PN123S T-9856 UCA 1400
Contextual Info: PANASONIC INDL/ELEK-CSEMI} 7SC D | bT3SflSM □ O O c!flfll4 fl | _ 6 9 3 2 8 52 P ANASONIC IN D L * ELECTRONIC 72C 0 9 8 8 4 D PN120S PN120S I- H I - G l '> ij u y NPN rhh / S i NPN Phototransistor Optical Control Systems LN62S £<7 Mfrnt>-&T'7i-s h -f Matched

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

transistor 30021

Abstract: PNA4602M
Contextual Info: Photo Detectors/Photo S3 • PIN Photodiodes for AF, CD, VD, Optical Communications, Control and Space Transmission Flat (Clear) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) PSD Flat (Visible light

TO44 package

Abstract: 09846 09843 LN61C LN62S LN65 PN120S infrared 950nm PU160 PANASONIC FL
Contextual Info: PANASONIC INDL/ELEK-CSEMI}. 72C D | t.=]32fi54 DOCHaqS 3 | 6932852 PANASONIC IN DL * E L E C T R O N IC 7T 7 K E U ? h D - " J O ? ! W 72C 0 9 84 2 _ ~ X D _ IN61C LN61C T- G aA s K / G a A s Infrared Light Em itting Diode Optical Control Systems

1k88

Abstract: PN3634 1R88 6N3P PNA4602M
Contextual Info: I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control II A p tr.tl e min. typ. lyp. typ. ( m A) (nm) (ns) (deg) PN3104 Flat (Clear) PSD 30 2 2 2 940 8 a 65 PN3106(N) Flat (Clear) PSD 30 2 13 940 5 u Flat (Clear) 2 PN3206

PN126S

Abstract: ON1503 PN7103
Contextual Info: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli­ Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10

PN7103

Abstract: pf204 mr03 C302 C5031 PNA4602M ON1501 PN334 PN106 PNA4602
Contextual Info: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. Flat (Clear) 2 division PF204-3 PN3104 Flat (Clear) PSD PN3106(N) tr.tf typ. (ns) typ 10 PF004-5 22 940 8 Flat (Clear) PSD

bt35f

Abstract: mf03 c PNA4602M
Contextual Info: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli­ cations Type No. PN334 Flat (Clear) 2 division Flat (Clear) PSD Flat (Clear) PSD Flat (Clear) 2 division Flat (Viable light cut) 2 division

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the