LJE42002T Search Results

Contextual Info: OLE D N AMER PHILIPS/DISCRETE MAINTENANCE TYPE • bbS3T31 DDmT 31 LJE42002T T*- 3 3 - 0 S' MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-emitter class-A amplifiers up to 4 GHz.

LJE42002T

Abstract: npn 41A
Contextual Info: N AMER PH ILIPS/ DIS CRETE OLE D • bbSBT31 0014131 7 ■ 11 M AINTENANCE TYPE LJE42002T _ J v MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI