LH5168H Search Results

LH5168D-10L

Abstract: tsop 338 IR LH5168 LH5168H
Contextual Info: SHARP CORP h lE LH5168 FEATURES • 8,192 • Access times: 80/100 ns MAX. • Low-power consumption: Operating: 303 mW (MAX.) LH5168/D/N @ 80 ns 248 mW (MAX.) LH5168/D/N/T/TR @ 100 ns 275 mW (MAX.) LH5168H/HD/HN @ 100 ns Standby: 5.5 jiW (MAX.) LH5168/D/N/T/TR

ic 121z

Abstract: lh5168
Contextual Info: LH5168 FEATURES • 8,192 • Access times: 80/100 ns MAX. • Low-power consumption: Operating: 303 mW (MAX.) LH5168/D/N @ 80 ns 248 mW (MAX.) LH5168/D/N/T/TR @ 100 ns 275 mW (MAX.) LH5168H/HD/HN @ 100 ns Standby: 5.5 nW (MAX.) LH5168/D/N/T/TR 16.5 (MAX.) LH5168H/HD/HN

Contextual Info: LH5168 CMOS 64K 8K x 8 Static Ram FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5168 is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • High speed access time: 100 ns (MAX.) The LH5168H is designed for wide temperature

LH5160

Abstract: LH5160D SHARP 20 WZ 51
Contextual Info: LH5168 / FEATURES • 8,192 x 8 bit organization • High speed access time: 100 ns MAX. • Low power consumption: Operating: 248 mW (MAX.) LH5168/D/N 275 mW (MAX.) LH5168H/HD/HN Standby: 5.5 nW (MAX.) LH5168/D/N 16.5 (MAX.) LH5168H/HD/HN • Fully static operation

MB81C78A-35

Abstract: LH5164-10 MB81C78A MB81C78-45 LH5268A-10LL LH5164L-15 LC3664BL-10 LH5164D LH5164D/N-10L LC3664BL-12
Contextual Info: CMOS 6 4 K m £ tt £ ¡á£ÍEH OC X TAAC •ax ns) TCAC (ns) ■f y ? S t a t i c RAM ( 81 9 2 x 8 ) ft ft TOE ■ax (ns) TOH min (ns) TOD max (ns) TWP min (ns.) TDS IE (ns) TDH min (ns) TWD min (ns) TWR max (ns) V I or V C C (V) 2 8 P I N IDO max (mA)

lh57257

Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Contextual Info: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429

BNK-17

Contextual Info: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85

A314J

Abstract: lm516 lm5168
Contextual Info: LH5168/H FEATURES CMOS 64K 8K x 8 Static RAM PIN CONNECTIONS • 8,192 x 8 bit organization • Access times: 80/100 ns (MAX.) Fully-Static operation • Three-state outputs • Single +5 V power supply • TTL compatible I/O • Wide temperature range available

lh5168

Contextual Info: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full

LHS168

Abstract: LH52252A LH52252
Contextual Info: V .J 1 íVt! Static RAMs ★Under development Process Capacity Model No. Configuration Access time ns 70 -I 16k 2k Package 90 100 120 LH5116 J— I. 24 24 24 LH5116H 3 -T 24 24 24 - Z ÏÏ-J 1 24 24 24 C E , C S c o n tro l Data retention current : 0.2 pAjMAXj j

lh5168h

Contextual Info: LH5168 CMOS 64K 8K x 8 Static Ram FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5168 is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times: 80/100 ns (MAX.) • Low-power consumption:

100 10L AD

Abstract: LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20
Contextual Info: MEMORIES • S ta tic R A M s Process Capacity ★ U nderdevelopm ent Configuration words Xbits Model No. Access tim e Supply current (ns) MAX. Cycle time operating/standby ImA) MAX. (ns) MIN. Supply voltage (V) Operating temperature (1C) Package LH5116/NA/D-10