KM23C2 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC 42E ]> n 7^4142 KM23C2100 0011124 ? ESSM6K CMOS MASK ROM 2M-BH 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itch ab le organization Byte M ode: 262,144 x 8 ROM T h e K M 23C 2100 is a fully s tatic m as k program m able

Contextual Info: CMOS MASK ROM KM23C256 G 256KBit (32Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C2S& 28-pfci IMP (Polarity pnQnnNM bli cMp a m U i pin M d output enable pin) • KM23C2S6Q: 32-pin SOP (Polarity programmable cMp enable pin and output enable pin)

KM23C2001

Abstract: mask rom mask rom 2m 23C2001
Contextual Info: KM23C2001 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • • • • • • • • 262,144 x 8 bit organization Fast access time: 150ns (max.) Supply voltage: single + SV Current consumption Operating: 50mA (max.) Fully static operation

Contextual Info: PRELIMINARY KM23C2100H CMOS MASK ROM 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access lime: 100ns (max.) • Supply voltage: single + 5V • Current consumption

INTEL86

Contextual Info: KM23C256 CMOS MASK ROM 256K-BH 32K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C256: 28-pin DIP (Polarity programmable chip enable pin and output enable pin) • KM23C256G: 32-pin SOP (Polarity programmable chip enable pin and output enable pin)

KM23C2100

Contextual Info: KM23C2100 CMOS MASK ROM 2M-BÌX 256KX 8/128Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization Byte Mods: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 ODlbTbb Sbb KM23C2001 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2001 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using

Contextual Info: b7E SAMSUNG ELECTRONICS INC 7^4142 O O l b W D 536 CMOS MASK ROM KM23C256 G 256K-Bit (32Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C2S& 28-pin DIP (PotarHy programmable chip enable pin and output enable pin) • KM23C256G: 32-pin SOP (Polarity programmable chip enable pin and

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 OOlb'iSñ 4TT KM23C2000 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using

Contextual Info: PRELIMINARY KM23C2001H CMOS MASK ROM 2M-Bit 256K x 8 CMOS MASK ROM FEATURES • • • • • • • • 262,144 x 8 bit organization Fast access time: 100ns (max.) Supply voltage: single + SV Current consumption Operating: 40mA (max.) Fully static operation

Contextual Info: PRELIMINARY CMOS MASK ROM KM23C2000H 2M-BH 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000H is a fu lly s ta tic m ask program m able ROM organized 2 6 2 ,1 4 4 x 8 b it It is fabricated using silicon-gate CMOS process tech nolog y

KM23C2000

Contextual Info: KM23C2000 CMOS MASK ROM 2M-Bit 256K x 8 CMOS MASK ROM FEATURES • • • • • • • • • 262,144 x 8 bit organization Fast access time: 150ns (max.) Supply voltage: single + 5V Current consumption Operating: 40mA (max.) Standby: 10(VA (max.) Fully static operation

Contextual Info: CMOS MASK ROM KM23C2000 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fu lly sta tic m ask program m able ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon-gate CMOS process technology. •

AX301

Contextual Info: KM23C256 CMOS MASK ROM 256K-Bit 32K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • K M 23C 256: 28-pin DIP (P olarity prog ram m able c hip enable pin and o u tp u t ena b le pin) • K M 23C 256G : 32-pin SO P (P olarity prog ram m able c h ip e n a b le pin and

23C2001

Contextual Info: CMOS MASK ROM KM23C2001 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 262,144 x 8 bit organization The K M 2 3 C 2 0 0 1 is a fu lly s ta tic m ask p ro g ra m m a b le R OM o rg a n iz e d 2 6 2 ,1 4 4 x 8 b it It is fa b ric a te d u s in g

KM23C2000A

Contextual Info: KM23C200QA G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000A is a fu lly s ta tic m ask program m able ROM organized 2 6 2 ,1 4 4 x 8 bit. It Is fabricated using silico n -g a te CMOS process tech nolog y.

Contextual Info: PRELIMINARY KM23C2000H CMOS MASK ROM 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000H is a fu lly s ta tic m ask program m able ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon -gate CMOS process technology.

Contextual Info: CMOS MASK ROM KM23C2001 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 2 0 0 1 is a fully static mask programmable ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon-gate CMOS process te ch n o lc

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E D 7^4145 DQlb'i74 b32 SP1GK CMOS MASK ROM KM23C2100 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072x16 • Fast access time: 150ns (max.)

Contextual Info: PRELIMINARY CMOS MASK ROM KM23C2100H 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 1 3 1 ,0 7 2 x 1 6 • Fast access time: 100ns (max.) • Supply voltage: single + 5V

23C2001

Abstract: 50-8S-G
Contextual Info: CMOS MASK ROM KM23C2001 2M-BH 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 2 0 0 1 is a fully static mask programmable ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon-gate CMOS process technology. •

Contextual Info: KM23G2000 G CMOS MASK ROM 2M-BH (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •

KM23C2100FP

Contextual Info: KM23C2100 CMOS MASK ROM 2M-Bit 256Kx8/128Kx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption

23c2100

Contextual Info: KM23C2100 CMOS MASK ROM 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchabie organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption