IXYP10N65C3 Search Results
IXYP10N65C3 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXYP10N65C3 | IXYS | IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 30A 160W TO220 | Original | 6 | |||
| IXYP10N65C3D1 | IXYS | Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 650V 30A 160W TO-220 | Original | 216.77KB | |||
| IXYP10N65C3D1M | IXYS | Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT | Original | 196.74KB |
IXYP10N65C3 Price and Stock
IXYS Corporation IXYP10N65C3Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3 |
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IXYP10N65C3 | 1 |
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IXYS Corporation IXYP10N65C3D1MIGBTs Disc IGBT XPT-GenX3 TO-220AB/FP |
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IXYP10N65C3D1M |
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IXYS Corporation IXYP10N65C3D1IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXYP10N65C3D1 |
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IXYP10N65C3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advance Technical Information IXYP10N65C3D1 XPTTM 650V IGBT GenX3TM w/Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 10A 2.50V 23ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR |
Original |
ixyp10n65c3d1ic11020-60khzo-220+3 | |
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Contextual Info: Advance Technical Information IXYP10N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 650V 10A 2.5V 23ns CE Tab TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
Original |
ixyp10n65c3ic11020-60khzo-220+1 | |
10N65CContextual Info: Advance Technical Information IXYP10N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Electrically Isolated Tab VCES = IC110 = VCE(sat) tfi(typ) = 650V 7A 2.6V 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions |
Original |
ixyp10n65c3d1mic11020-60khzo-220+4 |