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    10N65C Search Results

    10N65C Datasheets (2)

    Maplesemi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge SLF10N65C
    		Maplesemi 650V N-Channel MOSFET with 10A continuous drain current, 0.678 ohm typical RDS(on) at VGS=10V, low gate charge of 38nC, and fast switching for high-efficiency power applications. Original PDF
    badge SLP_F10N65C
    		Maplesemi 650V N-Channel MOSFET with 10A continuous drain current, 0.85Ω maximum RDS(on) at VGS = 10V, low gate charge of 48nC typical, suitable for high-efficiency power conversion applications. Original PDF
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    10N65C Price and Stock

    IXYS Corporation

    IXYS Corporation IXXN110N65C4H1

    IGBT Modules 650V/234A Trench IGBT GenX4 XPT
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    Mouser Electronics () IXXN110N65C4H1 697
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    IXXN110N65C4H1 697
    • 1 $26.17
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    TTI IXXN110N65C4H1 Tube 252 1
    • 1 $21.83
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    IXYS Corporation IXXH110N65C4

    IGBTs 650V/234A TRENCH IGBT GENX4 XPT
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    Mouser Electronics () IXXH110N65C4 265
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    IXXH110N65C4 265
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    TTI IXXH110N65C4 Tube 300 30
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    IXYS Corporation IXYP10N65C3D1M

    IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP
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    Mouser Electronics () IXYP10N65C3D1M
    • 1 $4.22
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    IXYP10N65C3D1M
    • 1 $4.22
    • 10 $2.77
    • 100 $2.07
    • 1000 $1.57
    • 10000 $1.48
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    IXYS Corporation IXYP10N65C3D1

    IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP
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    IXYP10N65C3D1
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    10N65C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    10N65C

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65-C Preliminary Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		10N65-C 10N65-C QW-R502-A79 10N65C PDF