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    10N65C Search Results

    10N65C Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge SLF10N65C
    		Maplesemi 650V N-Channel MOSFET with 10A continuous drain current, 0.678 ohm typical RDS(on) at VGS=10V, low gate charge of 38nC, and fast switching for high-efficiency power applications. Original PDF
    badge SLP_F10N65C
    		Maplesemi 650V N-Channel MOSFET with 10A continuous drain current, 0.85Ω maximum RDS(on) at VGS = 10V, low gate charge of 48nC typical, suitable for high-efficiency power conversion applications. Original PDF
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    10N65C Price and Stock

    IXYS Corporation

    IXYS Corporation IXXH110N65C4

    IGBT PT 650V 234A TO-247AD
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    Component Electronics, Inc IXXH110N65C4 10
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    IXYS Corporation IXXN110N65C4H1

    IGBT MOD 650V 210A 750W SOT-227B
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    IBS Electronics IXXN110N65C4H1 300
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    IXYS Corporation IXYP10N65C3

    IGBT PT 650V 30A TO-220-3
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    IXYS Corporation IXYP10N65C3D1

    IGBT PT 650V 30A TO-220
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    IXYS Corporation IXYP10N65C3D1M

    IGBT 650V 15A TO220 ISOLATED TAB
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    10N65C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    10N65C

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65-C Preliminary Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		10N65-C 10N65-C QW-R502-A79 10N65C PDF