IXTP3N100P Search Results

IXTP3N100P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTP3N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 3A TO-220	Original	PDF		4

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Littelfuse Inc IXTP3N100P Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/; \|Littelfuse IXTP3N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTP3N100P	Bulk			300	1 - 10 - 100 - 1000 $2.56 10000 $2.40	Buy Now
RS	IXTP3N100P	Bulk		8 Weeks	50	1 - 10 - 100 $4.01 1000 $4.01 10000 $4.01	Get Quote
Onlinecomponents.com	IXTP3N100P					1 - 10 - 100 $3.36 1000 $2.31 10000 $2.31	Buy Now
IXYS Corporation IXTP3N100P MOSFETs 3 Amps 1000V 4.8 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXTP3N100P	Tube			300	1 - 10 - 100 - 1000 $2.90 10000 $2.90	Buy Now
TME	IXTP3N100P				300	1 - 10 - 100 - 1000 $2.77 10000 $2.77	Get Quote

IXTP3N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTP3N100P Abstract: IXTA3N100P 3n100p T3N100 IXTH3N100P 3n100 Contextual Info: PolarTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta3n100p ixth3n100p ixtp3n100p o-263 +43n100p 3-08-a t3n100 3n100	PDF
IXTH3N100P Abstract: IXTA3N100P Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA3N100P IXTH3N100P IXTP3N100P = 1000V = 3.0A ≤ 4.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	ixta3n100p ixth3n100p ixtp3n100p o-263 +3o-220 3n100p 3-08-a	PDF
T3N100 Abstract: IXTH3N100P IXTP3N100P IXTA3N100P Siemens DIODE E 1220 Contextual Info: Polar VHVTM Power MOSFET IXTA3N100P IXTH3N100P IXTP3N100P VDSS ID25 = 1000V = 3A ≤ Ω 4.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta3n100p ixth3n100p ixtp3n100p o-263 +33n100p t3n100 siemens diode e 1220	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
MJ1005 Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007 Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:	Original	ixtm3n100a o-204aa/to-3 ixtm3n70a ixtm3n70 +12mj13081 mj13091 mj1005 md5000a 2n3052 mj12010 ixtp2n100a md7000 mj10011 mj11017 ixtp4n90a mj12007	PDF