IXTM12N90 Search Results

IXTM12N90

Abstract: SHD239611
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 900 12 7.2 300 0.9 @ 6 0.27 IXTM12N90

IXTM12N90

Abstract: SHD225611 SHD2257
Contextual Info: SENSITRON SEMICONDUCTOR SHD225611 TECHNICAL DATA DATASHEET 307, REV – Formerly Part Number SHD2257 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 900 Volt, 0.90 Ohm, 12A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Similar to Industry Part Type - IXTM12N90

Contextual Info: SENSITRON SEMICONDUCTOR SHD225611 TECHNICAL DATA DATASHEET 307, REV – Formerly Part Number SHD2257 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 900 Volt, 0.90 Ohm, 12A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Similar to Industry Part Type - IXTM12N90

Irfp250 irfp460

Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
Contextual Info: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)

SHD239608

Abstract: shd239606
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM

Contextual Info: □ VDSS MegaMOS FET IXTH/IXTM 10 N90 IXTH/IXTM 12 N90 900 V 900 V ^D25 DS on 10 A 1.10 ß 12 A 0.90 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25"C to 150°C 900 VoOB Tj = 25°C to 150°C; RGg = 1 M il 900 V Vos Continuous ±20 V VGSM

megamos

Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
Contextual Info: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4

IXFM50N20

Abstract: IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413
Contextual Info: POWER MOSFETS HERMETIC POWER MOSFETs N-CHANNEL, SURFACE MOUNT TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V BR DSS Volts SHD218413 30 SHD2181 60 SHD2182 100 SHD2183 200 SHD2184 400 SHD2185 500 SHD2186 800 SHD2187 900 SHD2188 1000 SHD218413A 30 SHD2181A 60

IXFH15N100

Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
Contextual Info: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP

10N90

Abstract: U3350 12N90 D-68623 IXTH10N90 IXTH12N90 IXTM10N90
Contextual Info: v DSS MegaMOS FET IXTH/IXTM 10 N90 900 V IXTH/IXTM 12 N90 900 V p ^D25 DS on 10 A 1.10 Q 12 A 0.90 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25 °C to 150°C 900 V v DCR Tj = 25°C to 150°C; RGS = 1 Mi2 900 V V GS Continuous ±20

Contextual Info: n ix Y S MegaMOS FET IXTH/IXTM 12N90 VDSS = 900 V lD25 =12 A ^D S on ” ^ N-Channel Enhancement Mode Symbol Test Conditions V DSS T j =25°C to 150°C 900 V v DGR T j = 25° C to 150° C; RGS= 1 M£2 900 V VQS v GSM Continuous i2 0 V Transient ±30 V

*2393n

Abstract: D2199 IRF9140 2184b d2186 2188a d2188
Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC POWER MOSFETs N -C H A N N E L . T O -2 5 4 . T O -2 5 7 TYPE NUM BER DRAIN TO SO URCE BREAKDO W N VOLTAGE CO NTINUO US DRAIN CURRENT M AXIM UM POWER DISSIPATION •d PD V (BR)DSS STATIC