IXGX75N250 Search Results

IXGX75N250 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGX75N250		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 170A 780W PLUS247	Original	PDF		5

IXGX75N250 Price and Stock

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IXYS Corporation IXGX75N250 IGBT NPT 2500V 170A PLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGX75N250	Tube			300	1 - 10 - 100 - 1000 $103.70 10000 $103.70	Buy Now
Mouser Electronics	IXGX75N250					1 - 10 - 100 - 1000 $126.42 10000 $126.42	Get Quote
TTI	IXGX75N250	Tube			300	1 - 10 - 100 - 1000 $118.51 10000 $118.51	Buy Now
Littelfuse Inc IXGX75N250 Disc Igbt Npt-Very Hi Voltage To-247Ad/ Tube \|Littelfuse IXGX75N250
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXGX75N250	Bulk			300	1 - 10 - 100 $108.68 1000 $108.68 10000 $108.68	Buy Now
RS	IXGX75N250	Bulk		8 Weeks	30	1 - 10 - 100 $145.95 1000 $145.95 10000 $145.95	Get Quote

IXGX75N250 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
75N250 Abstract: IXGK75N250 IXGX75N250 IXGk 75N250 PLUS247 B2493-1 123B16 Contextual Info: High Voltage IGBT For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.3V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES	Original	IXGK75N250 IXGX75N250 IC110 O-264 75N250 10-12-09-C IXGK75N250 IXGX75N250 IXGk 75N250 PLUS247 B2493-1 123B16	PDF
IXGk 75N250 Abstract: IXGK75N250 IXGX75N250 75N250 Plus PLUS247 Contextual Info: Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.7V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGK75N250 IXGX75N250 IC110 O-264 75N250 IXGk 75N250 IXGK75N250 IXGX75N250 Plus PLUS247	PDF
IXGK75N250 Abstract: Plus PLUS247 Contextual Info: Preliminary Technical Information IXGK75N250 IXGX75N250 High Voltage IGBT For Capacitor Discharge Applications VCES = 2500 V IC25 = 180 A VCE sat ≤ 2.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	IXGK75N250 IXGX75N250 IC110 75N250 IXGK75N250 Plus PLUS247	PDF
Contextual Info: Preliminary Technical Information High Voltage IGBTs VCES = 2500V IC110 = 75A VCE sat ≤ 2.7V IXGK75N250 IXGX75N250 For Capacitor Discharge Applications TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXGK75N250 IXGX75N250 O-264 75N250	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250	PDF