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    IXGX75N250 Search Results

    IXGX75N250 Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXGX75N250
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 170A 780W PLUS247 Original PDF 5
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    IXGX75N250 Price and Stock

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    IXYS Corporation IXGX75N250

    IGBTs PLUS247 2500V 75A IGBT
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    Mouser Electronics IXGX75N250
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    TTI IXGX75N250 Tube 300
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    TME IXGX75N250 300
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    Littelfuse Inc IXGX75N250

    Disc Igbt Npt-Very Hi Voltage To-247Ad/; |Littelfuse IXGX75N250
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    Newark IXGX75N250 Bulk 300
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    RS IXGX75N250 Bulk 8 Weeks 30
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    Onlinecomponents.com IXGX75N250
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    Flip Electronics IXGX75N250 750
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    IXGX75N250 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    75N250

    Abstract: IXGK75N250 IXGX75N250 IXGk 75N250 PLUS247 B2493-1 123B16
    Contextual Info: High Voltage IGBT For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.3V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES


    Original
    ixgk75n250ixgx75n250ic110o-264+675n25010-12-09-cixgk 75n250plus247b2493-1123b16 PDF

    IXGk 75N250

    Abstract: IXGK75N250 IXGX75N250 75N250 Plus PLUS247
    Contextual Info: Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.7V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    ixgk75n250ixgx75n250ic110o-264+475n250ixgk 75n250plusplus247 PDF

    IXGK75N250

    Abstract: Plus PLUS247
    Contextual Info: Preliminary Technical Information IXGK75N250 IXGX75N250 High Voltage IGBT For Capacitor Discharge Applications VCES = 2500 V IC25 = 180 A VCE sat ≤ 2.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    ixgk75n250ixgx75n250ic11075n250+2plusplus247 PDF

    Contextual Info: Preliminary Technical Information High Voltage IGBTs VCES = 2500V IC110 = 75A VCE sat ≤ 2.7V IXGK75N250 IXGX75N250 For Capacitor Discharge Applications TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    ic110ixgk75n250ixgx75n250o-264+175n250 PDF

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original
    o-264ixbx55n300plus247ixbf55n300+12o-268o-247ixgf30n400ixgf4n400ixgf25n250pulserisoplusixgf54n400discrete igbtsixth1n250ixbx64n250ixgt25n250 PDF