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IXGK75N250 Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGK75N250		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 170A 780W TO264	Original	PDF		5

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IXYS Corporation IXGK75N250 IGBTs TO264 2500V 75A IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGK75N250					1 $133.78 10 $126.45 100 $126.45 1000 $126.45 10000 $126.45	Get Quote
TTI	IXGK75N250	Tube			300	1 - 10 - 100 - 1000 $116.33 10000 $116.33	Buy Now
Future Electronics	IXGK75N250	Tube		46 Weeks	25	1 - 10 - 100 $145.42 1000 $145.42 10000 $145.42	Buy Now
TME	IXGK75N250				1	1 $114.73 10 $114.73 100 $107.01 1000 $107.01 10000 $107.01	Get Quote
Littelfuse Inc IXGK75N250 Transistor, Igbt, 2.5Kv, 170A, To-264; Continuous Collector Current:170A; Collector Emitter Saturation Voltage:3.6V; Power Dissipation:780W; Collector Emitter Voltage Max:2.5Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXGK75N250	Bulk	4		1	1 $141.59 10 $141.59 100 $113.12 1000 $106.20 10000 $101.58	Buy Now
RS	IXGK75N250	Bulk		8 Weeks	25	1 - 10 - 100 $181.01 1000 $181.01 10000 $181.01	Get Quote
Onlinecomponents.com	IXGK75N250					1 - 10 - 100 $282.22 1000 $96.16 10000 $96.16	Buy Now

IXGK75N250 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
75N250 Abstract: IXGK75N250 IXGX75N250 IXGk 75N250 PLUS247 B2493-1 123B16 Contextual Info: High Voltage IGBT For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.3V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES	Original	ixgk75n250 ixgx75n250 ic110 o-264 +675n250 10-12-09-c ixgk 75n250 plus247 b2493-1 123b16	PDF
IXGk 75N250 Abstract: IXGK75N250 IXGX75N250 75N250 Plus PLUS247 Contextual Info: Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.7V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	ixgk75n250 ixgx75n250 ic110 o-264 +475n250 ixgk 75n250 plus plus247	PDF
IXGK75N250 Abstract: Plus PLUS247 Contextual Info: Preliminary Technical Information IXGK75N250 IXGX75N250 High Voltage IGBT For Capacitor Discharge Applications VCES = 2500 V IC25 = 180 A VCE sat ≤ 2.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ixgk75n250 ixgx75n250 ic110 75n250 +2plus plus247	PDF
Contextual Info: Preliminary Technical Information High Voltage IGBTs VCES = 2500V IC110 = 75A VCE sat ≤ 2.7V IXGK75N250 IXGX75N250 For Capacitor Discharge Applications TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	ic110 ixgk75n250 ixgx75n250 o-264 +175n250	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	o-264 ixbx55n300 plus247 ixbf55n300 +12o-268 o-247 ixgf30n400 ixgf4n400 ixgf25n250 pulser isoplus ixgf54n400 discrete igbts ixth1n250 ixbx64n250 ixgt25n250	PDF