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    IXGH41N60 Search Results

    IXGH41N60 Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXGH41N60
    IXYS 600V ultra-low voltage IGBT Original PDF 34.36KB 2

    IXGH41N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ixysmosfets

    Contextual Info: DIXYS Ultra-Low VCE sat IGBT vCES IXGH41N60 •c25 ^ C E (s a t) = 600 V = 76 A = 1.6 V Preliminary data Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V VCGft Tj = 25°C to 150°C; RGE = 1 MQ 600 V VGEg Continuous ±20 V VGEM Transient


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    ixgh41n60o-247ixysmosfets PDF

    IXGD32N60B-5X

    Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
    Contextual Info: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43


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    ixgd28n30-43ixgd40n30-5xixgd12n60b-3xixgd31n60-4x+11ixgd41n60-5xixgd60n60-7yixgd200n60b-9xixgd2n100-1mixgd4n100-1tixgd8n100-2lixgd32n60b-5xixgh45n120ixgh24n60bixgh50n60bixgh32n60b PDF

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original
    ixfd50n20ixgd32n60bixfd75n10ixtd5n100+6ixth40n2591x0ixgh25n120aixtd5n100-5tixgd32n60b-5xixgd8n100-2l PDF

    Contextual Info: riTvv<v Ultra-Low VCE sat IGBT IXGH 41N60 V CES ^C25 V CE(sat) = 600 V = 76 A = 1.6 V Preliminary data Symbol Maximum Ratings Test Conditions v C ES Tj = 25°C to 150°C 600 V VC G R Tj = 25°C to 150°C; RGE = 1 MQ 600 V VGES Continuous +20 V v GEM Transient


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    41n60o-247 PDF

    IXGH24N50B

    Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
    Contextual Info: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out­ line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500


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    ixgd28n30-43ixgd40n30-5xixgd12n60b-33ixgd31n60-4x+13ixgd41n60-5xixgd60n60-7xixgd200n60-9xixgd8n100-2lixgd12n100-33ixgd17n100-4tixgh24n50bixgh50n60bixgh32n60bixgh50n60aixgh24n60a equivalentixgh24n60aixgh17n100 PDF

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Contextual Info: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original
    sgr2n60ufdsgp10n60rufsgp10n60rufdsgh10n60rufd+15sgw10n60rufdsgp06n60skb10n60bup400dsgb15n60sgh80n60rufdbup314 equivalentbup314dsgh30n60ufdsgu06n60bup314motorola diode cross referencemgy20n120dixdh30n120au1sgp15n120 PDF

    Ixgr50n60

    Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
    Contextual Info: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)


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    o-263plus247tmo-247ixgh28n60b+16ixgh31n60o-268aao-204lsoplus247tmot-227bixga20n120ixgr50n60ixgn60n60ixgx120n60bisoplus247tmixgr40n60ixgh60n60ixgh32n170ixgh35n120ixga20n60bixgp12n60c PDF