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    IXGH24N60C4 Search Results

    IXGH24N60C4 Datasheets (2)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXGH24N60C4
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO247 Original PDF 2
    IXGH24N60C4D1
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO247 Original PDF 7

    IXGH24N60C4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Advance Technical Information High-Gain IGBTs VCES IC110 VCE sat tfi(typ) IXGP24N60C4 IXGH24N60C4 High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    ic110ixgp24n60c4ixgh24n60c4o-220ab+1338b2 PDF

    Contextual Info: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    ixgp24n60c4ixgh24n60c4ic110o-220ab+2o-247338b2 PDF

    IXGH24N60C4D1

    Abstract: 24N60C4D1 G24N60
    Contextual Info: High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM


    Original
    ixgh24n60c4d1ic110o-247if110+224n60c4d1g24n60 PDF

    IC110

    Abstract: IXGH24N60C4 IXGP24N60C4
    Contextual Info: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    ixgp24n60c4ixgh24n60c4ic110o-220ab+1338b2 PDF

    IXGH24N60C4D1

    Abstract: IF110
    Contextual Info: Advance Technical Information High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    ixgh24n60c4d1ic110o-247if110+1338b2 PDF

    IXGH24N60C4

    Abstract: IXGP24N60C4
    Contextual Info: Advance Technical Information IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-263 (IXGA) G E C (Tab) TO-220 (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR


    Original
    ixga24n60c4ixgp24n60c4ixgh24n60c4ic110+3o-263o-220338b2 PDF

    24N60C4D1

    Abstract: G24N60
    Contextual Info: High-Gain IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXGH24N60C4D1 High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM


    Original
    ic110ixgh24n60c4d1o-247if110+224n60c4d1g24n60 PDF