IXFN30N110P Search Results
IXFN30N110P Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXFN30N110P |
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FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1100V 25A SOT-227B | Original | 4 |
IXFN30N110P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Preliminary Technical Information IXFN30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 25A Ω 360mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions |
Original |
ixfn30n110p300nsot-227e153432+1 | |
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Contextual Info: IXFN30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode S Test Conditions VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous ± 30 V VGSM Transient |
Original |
ixfn30n110p300nsot-227e153432+2 | |
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Contextual Info: OBSOLETE IXFN30N110P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode S Test Conditions VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous ± 30 |
Original |
30n110p4-01-08-a | |
1200 volt mosfet
Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
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Original |
000-1200vixfb30n120pixfl30n120pixfn30n120p+14 |