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    IXFK88N30P Search Results

    IXFK88N30P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFK88N30P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 88A TO-264 Original PDF 5
    SF Impression Pixel

    IXFK88N30P Price and Stock

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    IXYS Corporation IXFK88N30P

    Mosfet, N, To-264; |Ixys Semiconductor IXFK88N30P
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    Newark IXFK88N30P Bulk 1
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    TTI IXFK88N30P Tube 300
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    Future Electronics IXFK88N30P Tube 21 Weeks 300
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    TME IXFK88N30P 1 1
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    • 100 $10.37
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    Littelfuse Inc IXFK88N30P

    DiscMosfetN-CH HiPerFET-Polar TO-264(3)
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    RS IXFK88N30P Bulk 8 Weeks 25
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    Onlinecomponents.com IXFK88N30P
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    Flip Electronics IXFK88N30P 900
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    IXFK88N30P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    88N30

    Abstract: IXFH88N30P 88N30P IXFK88N30P diode 300v IXFT88N30P
    Contextual Info: IXFT88N30P IXFH88N30P IXFK88N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		ixft88n30pixfh88n30pixfk88n30p200ns+5o-26888n30p1-18-09-a88n30diode 300v PDF

    Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFT88N30P IXFH88N30P IXFK88N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		ixft88n30pixfh88n30pixfk88n30p200ns+3o-26888n30p1-18-09-a PDF