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    IXFH88N30P Search Results

    IXFH88N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFH88N30P
    		IXYS PolarHT HiPerFET Power MOSFET Original PDF 608.94KB 5
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    IXFH88N30P Price and Stock

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    IXYS Corporation IXFH88N30P

    MOSFET N-CH 300V 88A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH88N30P Tube 1
    • 1 $15.96
    • 10 $15.96
    • 100 $10.74
    • 1000 $8.73
    • 10000 $8.73
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    Mouser Electronics IXFH88N30P 264
    • 1 $16.13
    • 10 $11.21
    • 100 $11.21
    • 1000 $8.73
    • 10000 $8.73
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    Verical IXFH88N30P 300 4
    • 1 -
    • 10 $15.36
    • 100 $11.09
    • 1000 $11.09
    • 10000 $11.09
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    Future Electronics IXFH88N30P Tube 300
    • 1 -
    • 10 -
    • 100 $9.81
    • 1000 $9.64
    • 10000 $9.64
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    TTI IXFH88N30P Tube 300
    • 1 -
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    • 100 -
    • 1000 $8.87
    • 10000 $8.87
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    TME IXFH88N30P 300 1
    • 1 $14.88
    • 10 $14.88
    • 100 $9.65
    • 1000 $9.65
    • 10000 $9.65
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    Littelfuse Inc IXFH88N30P

    Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFH88N30P
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    Newark IXFH88N30P Bulk 300
    • 1 -
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    • 1000 $8.84
    • 10000 $8.84
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    RS IXFH88N30P Bulk 8 Weeks 30
    • 1 -
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    • 100 $11.76
    • 1000 $11.76
    • 10000 $11.76
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    IXFH88N30P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    88N30

    Abstract: IXFH88N30P 88N30P IXFK88N30P diode 300v IXFT88N30P
    Contextual Info: IXFT88N30P IXFH88N30P IXFK88N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFT88N30P IXFH88N30P IXFK88N30P 200ns O-268 IXFT88N30P 88N30P 1-18-09-A 88N30 IXFH88N30P IXFK88N30P diode 300v PDF

    Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFT88N30P IXFH88N30P IXFK88N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFT88N30P IXFH88N30P IXFK88N30P 200ns O-268 IXFT88N30P 88N30P 1-18-09-A PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF