IS211 Search Results

TA4003F

Contextual Info: TOSHIBA TA4003F Bipolar Linear Integrated Circuit U nit in m m VHF ~ UHF Wide Band Amplifier F eatu res • Band W idth 1,5CHz typ. .(3dB down, Vc c = 2V) • High Gain: IS2112 = 11 dB (typ.), f = 500M Hz, Vc c = 2V) • Operating Supply Voltage : Vc c = 2 ~ 3V

E91231

Abstract: IS211 mosfet 4 DC93058
Contextual Info: IS211 Brand Name IS211 Small Outline Photo DMOS-FET Relay with High Load Voltage Capabilities Part Number Date Code UL Pending File No. E91231 0.1 l APPROVALS 5.2 2.0 4.3 week month year 0.4 6.8 DESCRIPTION Storage Temperature _ -40°C to+ 100°C Operating Temperature _ -40°C to + 85°C

E91231

Abstract: IS211
Contextual Info: ISOCOM COMPONENTS IS211 Small Outline Photo DMOS-FET Relay with High Load Voltage Capabilities APPROVALS UL Pending File No. E91231 IS211 DESCRIPTION The IS211 is a miniature 1-Form A solid state relay in a 4 pin SOP package. The IS211 utilises MOSFET technology that is optically coupled to a

Contextual Info: TOSHIBA Discrete Semiconductors TA4003F Bipolar Linear Integrated Circuit Unit in mm VHF ~ UHF Wide Band Amplifier Features • Band Width 1,5CHz typ. .(3dB down, Vcc = 2V) • High Gain: IS2112 = 11 dB (typ.), f = 500MHz, Vc c = 2V) • Operating Supply Voltage : Vcc = 2 ~ 3V

Contextual Info: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: Thp% H E W L E T T WLUM P A C K A R D Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-01100 Features • Cascadable 50 Q Gain Block • Low N oise Figure: 1.7 dB Typical at 100 MHz • High Gain: 32.5 dB Typical at 100 MHz • 3 dB Bandwidth:

Contextual Info: □014577 E p \ n i ^ D i G i c s 0GGGb23 ATA00501D1C AGC Transimpedance Amplifier SONET OC-1 Preliminary ‘ Your GaAs IC Source REV 4 FEATURES • Single +5 Volt Supply ■ Automatic Gain Control 11T APPLICATIONS ■ SONET OC-1 Receiver ■ FITL ■ Excellent Sensitivity

Contextual Info: What H E W L E T T mLnM P a c k a r d Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02184 INA-02186 F eatures • Cascadable 50 Q Gain Block • Low N oise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31 dB Typical at 0.5 GHz

pseudomorphic HEMT

Abstract: CFA0103 CFA0103L CFA0103-L
Contextual Info: Low Noise GaAs FETs CFA0103 July 2006 - Rev 31-Jul-06 Features High Gain Super Low Noise Pseudomorphic HEMT 70 Mil Hermetic Package Applications Satellite Receivers Point-to-Point Radio Receivers Commercial Communications Defense Electronics General Description

MMIC A06

Contextual Info: mL'EM P A C K A R D Thp\ HEW LETT- Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0700 Features • Cascadable 50 Q Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.5 GHz • 13.0 dB Typical Gain at 1.0 GHz

Contextual Info: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page

Contextual Info: Who mifíM1 HEWLETT PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0185 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable k > l • Low Cost Plastic Package

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

MRF942

Abstract: NF50
Contextual Info: Order this data sheet by MRF942/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF942 The RF Line NPN Silicon Low Noise, High-Frequency Transistor IC = 40 mA LOW NOISE HIGH FREQUENCY TRANSISTOR . . designed for use in high gain, low noise small-signal amplifiers. This device features

Contextual Info: MA4TD0900 M/A-COM AIÂCGM Silicon Bipolar MMIC Cascadable Amplifier Chip Outline Drawing Features • • • • • M R F & Microwave Products Cascadable 5Oil Gain Block 3dB Bandwidth: DC to 4.5 GHz 8.0 dB Typical Gain @ 1.0 GHz Low SWR: <1.5 from 0.1 to 3.0 GHz

Contextual Info: S IE M E N S CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for

MRF162

Abstract: S21171 triode FU 33 MOTOROLA TRANSISTOR 712
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F162 The RF MOSFET Line RF P o w er Field E ffe c t Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance

z0140

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor Designed prim arily for use in high-gain, low -noise, sm all-signal amplifiers. Also used in applications requiring fast switching times. • High C urrent-G ain — Bandwidth Product —

MRF581

Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz

Contextual Info: m H EW LE TT MSA-0886 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Am plifiers PACKARD Features 86 Plastic Package • Usable Gain to 5.5 GHz • High Gain: 32.5 dB typical at 0.1 GHz 22.5 dB typical at 1.0 GHz • Low Noise Figure: 3.3 dB typical at 1.0 GHz

Contextual Info: m HEWLETT PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1105 Features Description • High Dynamic Range Cascadable 50 £2 or 75 Q Gain Block • 3 IB Bandwidth: The MSA-1105 is a high perfor­ mance silicon bipolar Monolithic

SA2111

Contextual Info: m H EW LETT PACKARD M SA-2111 M O D A M P C a s c a d a b le S ilic o n B ip o la r M o n o lith ic M ic ro w a v e Integrated C irc u it A m p lifie r s SOT-143 Package Features • • • • • • Cascadable 50 £2 Gain Block Medium Power: 10 dBm at 900 MHz

IT495

Contextual Info: That H EW L E T T maim PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0270 Features • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable k > l • Hermetic Gold-ceramic