IS2112 Search Results

TA4003F

Contextual Info: TOSHIBA TA4003F Bipolar Linear Integrated Circuit U nit in m m VHF ~ UHF Wide Band Amplifier F eatu res • Band W idth 1,5CHz typ. .(3dB down, Vc c = 2V) • High Gain: IS2112 = 11 dB (typ.), f = 500M Hz, Vc c = 2V) • Operating Supply Voltage : Vc c = 2 ~ 3V

Contextual Info: TOSHIBA Discrete Semiconductors TA4003F Bipolar Linear Integrated Circuit Unit in mm VHF ~ UHF Wide Band Amplifier Features • Band Width 1,5CHz typ. .(3dB down, Vcc = 2V) • High Gain: IS2112 = 11 dB (typ.), f = 500MHz, Vc c = 2V) • Operating Supply Voltage : Vcc = 2 ~ 3V

Contextual Info: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: What H E W L E T T mLnM P a c k a r d Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02184 INA-02186 F eatures • Cascadable 50 Q Gain Block • Low N oise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31 dB Typical at 0.5 GHz

pseudomorphic HEMT

Abstract: CFA0103 CFA0103L CFA0103-L
Contextual Info: Low Noise GaAs FETs CFA0103 July 2006 - Rev 31-Jul-06 Features High Gain Super Low Noise Pseudomorphic HEMT 70 Mil Hermetic Package Applications Satellite Receivers Point-to-Point Radio Receivers Commercial Communications Defense Electronics General Description

MMIC A06

Contextual Info: mL'EM P A C K A R D Thp\ HEW LETT- Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0700 Features • Cascadable 50 Q Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.5 GHz • 13.0 dB Typical Gain at 1.0 GHz

Contextual Info: Who mifíM1 HEWLETT PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0185 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable k > l • Low Cost Plastic Package

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

MRF942

Abstract: NF50
Contextual Info: Order this data sheet by MRF942/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF942 The RF Line NPN Silicon Low Noise, High-Frequency Transistor IC = 40 mA LOW NOISE HIGH FREQUENCY TRANSISTOR . . designed for use in high gain, low noise small-signal amplifiers. This device features

Contextual Info: MA4TD0900 M/A-COM AIÂCGM Silicon Bipolar MMIC Cascadable Amplifier Chip Outline Drawing Features • • • • • M R F & Microwave Products Cascadable 5Oil Gain Block 3dB Bandwidth: DC to 4.5 GHz 8.0 dB Typical Gain @ 1.0 GHz Low SWR: <1.5 from 0.1 to 3.0 GHz

Contextual Info: m H EW LE TT MSA-0886 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Am plifiers PACKARD Features 86 Plastic Package • Usable Gain to 5.5 GHz • High Gain: 32.5 dB typical at 0.1 GHz 22.5 dB typical at 1.0 GHz • Low Noise Figure: 3.3 dB typical at 1.0 GHz

Contextual Info: m HEWLETT PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1105 Features Description • High Dynamic Range Cascadable 50 £2 or 75 Q Gain Block • 3 IB Bandwidth: The MSA-1105 is a high perfor­ mance silicon bipolar Monolithic

SA2111

Contextual Info: m H EW LETT PACKARD M SA-2111 M O D A M P C a s c a d a b le S ilic o n B ip o la r M o n o lith ic M ic ro w a v e Integrated C irc u it A m p lifie r s SOT-143 Package Features • • • • • • Cascadable 50 £2 Gain Block Medium Power: 10 dBm at 900 MHz

SIEMENS thyristor

Abstract: transistor smd AFE smd transistor G9
Contextual Info: SIEMENS 1 Technical Information Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.

Contextual Info: MA4TD0800 M/A-COM Silicon Bipolar MMIC Cascadable Amplifier Chip Outline Drawing Features • • • • AMIÂ C GM RF&M icrowaveProducts 1, 2 , 3 , 4 Cascadable 5Oil Gain Block High Gain: 32.5 dB Typical Gain @ 0.1 GHz 18.5 dB Typical Gain @ 1.0 GHz Low Noise Figure: 3.2 dB Typical @ 1.0 GHz

Contextual Info: Who1 HEW LETT wLfiM PA C K A R D Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0435, -0436 Features designed for use as a general purpose 50 Q gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applica­

Contextual Info: Thal 1 "UM HEWLETT PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data M SA-1100 F eatures combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. • High Dynamic Range

sot 223 marking code jb

Abstract: pj 939 pj 936 R/diode pj 936
Contextual Info: Whpl H E W L E T T mLìiM P A C K A R D Silicon Bipolar Monolithic Amplifiers HPMA-0600 HPMA-0611 HPMA-0635 HPMA-0685 HPMA-0686 Technical Data Features HPMA-0600 • 3 dB B andw idth: DC to 1.0 GHz • 19.9 dB G ain Typical at 0.5 GHz • Low Noise F igure: 2.7 dB

Contextual Info: Whnl HEW LETT mL'HM PA C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0285 Features • Cascadable 50 £2 Gain Block • 3 dB Bandwidth: DC to 2.6 GHz • 12.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable k>l • Low C ost Plastic Package

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D WkTM HEW LETT mHEM P A C K A R D 4 4 4 7 5 A 4 D D 1 0 D 1 3 3ET • H P A MagIC Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Chip Outline1 Features • • • • • ■ INA-01100 Cascadable 50 Q Gain Block Low Noise Figure: 1.7 dB typical at 100 MHz

AN-A006

Contextual Info: W hot HEWLETT mLEM PA C K A R D 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm Pj jb at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications

Contextual Info: AVANTEK IN C SCIE D ^AVANTEK • UHL%t QOObbBb 3 ■ MSA-0200 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek Chip Outline1 Features NOTAPPLICABLE • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.8 GHz

Contextual Info: á P * S M F -0 3 1 0 0 B ELECTRONICS Sam sung M icrow ave Sem ico nd ucto r G e lili O p tÍV H ÍZ G C l G aAs FET 2-20 GHz Description Features The SMF-03100 is a 300 |im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s gain optimized G10 process. Ti/Pt/Au gate metallization and

FHX13x

Contextual Info: FHX13X, FHX14X GaAs F E I & Hü MT Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions Min. Limit Typ. Max. Unit VDS = 2V, V q s = 0V 10 30 60 mA Transconductance 9m V d S = 2V, Id s = 10mA