IRL520S Search Results

AN-994

Abstract: IRL520S SMD-220 rg902
Contextual Info: PD-9.908 International Rectifier IRL520S HEXFEf Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V 175°C Operating Temperature

DIODE S3V

Abstract: DIODE S3V 08 IRL520S DIODE S3V 50
Contextual Info: IRL520S A dvanced Power MOSFET FEATURES B V DSS — 1 0 0 V ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 9 -2 A lD = ♦ Improved Gate Charge 0 .2 2 Î1 ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

IRL520S

Contextual Info: $GYDQFHG 3RZHU 026 7 IRL520S FEATURES BVDSS = 100 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.22Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 9.2 A ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

Contextual Info: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single DESCRIPTION D D2PAK Third generation Power MOSFETs from Vishay provide the

ls92

Abstract: MOSFET 20V
Contextual Info: IRL520S Advanced Power MOSFET FEATURES - 100 V ^ D S o n = 0.22Q B ^D S S ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD ♦ Improved Gate Charge ♦ Extended Safe Operating Area 9-2 A = D2-PAK ♦ 175°C Operating Temperature

Contextual Info: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single DESCRIPTION D D2PAK Third generation Power MOSFETs from Vishay provide the

IRL520S

Contextual Info: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single DESCRIPTION D D2PAK Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRL520S A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .2 2 a o II ♦ Lower Input Capacitance ho ♦ Rugged Gate Oxide Technology CD ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

Contextual Info: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

Contextual Info: IRL520S, SiHL520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

1RL520

Abstract: 25CC 561C AN-994 IRL520 IRL520S SMD-220 smd diode marking U10
Contextual Info: International Rectifier PD-9.561C IRL520 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS= 100V R DS(on) = 0.27Q

90980

Abstract: IRFI540G h6 SMD SMD BR 42
Contextual Info: I n t e r n a t i o n a l R e c t if ie r mm HEXFET " Power MOSFETS V BR DSS Drairt-to-Source BreakdownVoltage (Vohs) Put Number RdS<wi) On-Stata Resistan« (3) (Ohms) IßContinuous Drain Current 25"C 100°C (Amps) (Amps) row ) PD«Tc=25"C Max Power Dissipation

IRF9530S

Abstract: smd H5 08 SMD BR 88
Contextual Info: International lÜRectifier HEXFET Power MOSFETs Surface Mount S M D -2 2 0 These devices provide the highest power capacity and lowest possible on-resistance in a surface mount package. They can dissipate up to 2W in a typical surface mount application and are available in tape and reel.

IRF5905

Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Contextual Info: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES

9137

Abstract: surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250
Contextual Info: HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max.

FL110

Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Contextual Info: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case

IRF734

Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
Contextual Info: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566