IRF1010E Search Results
IRF1010E Datasheets (37)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRF1010E | International Rectifier | 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010E with Standard Packaging | Original | 206.74KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010E | International Rectifier | HEXFET Power MOSFET | Original | 168.91KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010E | International Rectifier | HEXFET Power MOSFET | Original | 202.54KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010E | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010E | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 81A, Pkg Style TO-220AB | Scan | 50.01KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010EL | International Rectifier | 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010EL with Standard Packaging | Original | 126.95KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010EL | International Rectifier | HEXFET Power MOSFET | Original | 209.85KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010EL | International Rectifier | HEXFET Power MOSFET | Original | 123.88KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010EL | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010ELPBF | International Rectifier | 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1010EL with Lead Free Packaging | Original | 126.95KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010ELPBF | International Rectifier | TRANS MOSFET N-CH 60V 84A 3TO-262 | Original | 220.23KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010EPBF | International Rectifier | 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF1010E with Lead-Free Packaging. | Original | 206.74KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010EPBF | International Rectifier | TRANS MOSFET N-CH 60V 84A 3TO-220AB | Original | 180.02KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010ES | International Rectifier | HEXFET Power Mosfet | Original | 123.87KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010ES | International Rectifier | HEXFET Power Mosfet | Original | 209.84KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010ES | International Rectifier | 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF1010ES with Standard Packaging | Original | 126.95KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010ES | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010ESL | International Rectifier | HEXFET Power Mosfet | Original | 209.84KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010ESPBF | International Rectifier | TRANS MOSFET N-CH 60V 84A 3D2-PAK | Original | 220.23KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010ESPBF | International Rectifier | 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF1010ES with Lead Free Packaging | Original | 126.95KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010E Price and Stock
Infineon Technologies AG IRF1010ESTRLPBFTrans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF1010ESTRLPBF | 74,171 | 325 |
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| IRF1010ESTRLPBF | 14,400 | 325 |
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| IRF1010ESTRLPBF | 5,600 | 325 |
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IRF1010ESTRLPBF | Bulk | 800 |
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IRF1010ESTRLPBF | 94,171 | 1 |
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IRF1010ESTRLPBF | 6,660 |
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Infineon Technologies AG IRF1010EPBFTrans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF1010EPBF | 3,472 | 16 |
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| IRF1010EPBF | 3,000 | 1,000 |
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| IRF1010EPBF | 1,000 | 78 |
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| IRF1010EPBF | 675 | 475 |
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| IRF1010EPBF | 180 | 4 |
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| IRF1010EPBF | 51 | 14 |
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IRF1010EPBF | Tube | 660 | 20 Weeks | 50 |
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| IRF1010EPBF | Bulk | 1 |
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IRF1010EPBF | 3,479 | 19 Weeks | 1 |
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| IRF1010EPBF | 3,000 | 20 Weeks | 1,000 |
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| IRF1010EPBF | 180 | 20 Weeks | 1 |
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| IRF1010EPBF | 51 | 1 |
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IRF1010EPBF | Bulk | 302 | 1 |
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IRF1010EPBF | Bulk | 13 | 3 Weeks | 1 |
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IRF1010EPBF | 1,125 | 1 |
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IRF1010EPBF | 433 | 1 |
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IRF1010EPBF | 21 Weeks | 1,000 |
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IRF1010EPBF | 15,580 |
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Infineon Technologies AG IRF1010EZPBFTrans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF1010EZPBF | 938 | 3 |
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| IRF1010EZPBF | 16 | 16 |
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IRF1010EZPBF | Bulk | 1 |
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| IRF1010EZPBF | Tube | 1,000 |
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IRF1010EZPBF | 938 | 20 Weeks | 1 |
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IRF1010EZPBF | Bulk | 117 | 1 |
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IRF1010EZPBF | Bulk | 10 |
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IRF1010EZPBF | Tube | 150 | 1 |
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IRF1010EZPBF | 6,591 |
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Infineon Technologies AG IRF1010EPBF.Pwr Mosfet, N Channel, 60V, 84A; |Infineon Technologies IRF1010EPBF. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF1010EPBF. | Bulk | 50 |
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Buy Now | ||||||
Infineon Technologies AG AUIRF1010EZAUIRF1010EZ N-CHANNEL MOSFET TRANSISTOR, 84 A, 60 V, 3-PIN TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AUIRF1010EZ | Bulk | 5 |
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IRF1010E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AN-994
Abstract: IRF1010EL IRF1010ES IRF530S IRF1010ELPBF
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Original |
irf1010esirf1010elirf1010espbfirf1010elpbf+3 | |
IRF1010EContextual Info: P D -9 .1 6 7 0 B International I R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 60 V R ü S o n = 0.0120 . ID = 81 A © Description Fifth G e n e ratio n H E X F E T s from International Rectifier |
OCR Scan |
irf1010e | |
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Contextual Info: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description Advanced HEXFET® Power MOSFETs from International |
Original |
irf1010eo-220 | |
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Contextual Info: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description |
Original |
irf1010epbfo-220fo20ab | |
IRF1010E
Abstract: *f1010e
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OCR Scan |
irf1010eo-220f1010e | |
irf1010e
Abstract: irf1010e equivalent *f1010e
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Original |
1670birf1010eo-220irf1010e equivalent+1 | |
51a marking
Abstract: IRF1010EZS AN-994 IRF1010EZ IRF1010EZL
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Original |
94724birf1010ezirf1010ezsirf1010ezl+3 | |
irf1010e equivalent
Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
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Original |
o-220abo-220irfz24nirfiz24n+16 | |
AN-994
Abstract: IRF1010EL IRF1010ES *f1010e
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Original |
irf1010esirf1010elan-994f1010e | |
IRF1010EContextual Info: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description Advanced HEXFET® Power MOSFETs from International |
Original |
irf1010eo-220o-220ab | |
AN-994
Abstract: IRF1010EL IRF1010ES
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Original |
irf1010esirf1010elan-994 | |
IRF1010E
Abstract: IOR 1010
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OCR Scan |
irf1010eior 1010 | |
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Contextual Info: PD - 94965B IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description |
Original |
94965birf1010epbfo-220 | |
IRF1010E
Abstract: *f1010e T0-262 EIA marking code RV surface mount diode
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OCR Scan |
irf101oesirf1010elirf1010ef1010e+2 | |
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Contextual Info: PD - 94965B IRF1010EPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 12mΩ G ID = 84A S Description |
Original |
94965birf1010epbfo-220 | |
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Contextual Info: PD - 94724 IRF1010EZ AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 60V RDS on = 8.5mΩ |
Original |
irf1010ezo-220abirf1010 | |
AN-994
Abstract: IRF1010EZ IRF1010EZL IRF1010EZS
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Original |
irf1010ezpbfirf1010ezspbfirf1010ezlpbfeia-418+5 | |
AN-994
Abstract: IRF1010EL IRF1010ES IRF530S
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Original |
irf1010esirf1010elirf1010espbfirf1010elpbf+3 | |
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Contextual Info: P D - 9 .1 7 2 0 International IQ R Rectifier IR F 1 0 1 0 E S /L HEXFET^ Power MOSFET Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 6 0 V |
OCR Scan |
irf1010esirf1010el | |
*f1010e
Abstract: IRF1010E IRF 315
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OCR Scan |
irf1010ef1010eirf 315 | |
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Contextual Info: IRF1010E l l l l l l TO-220AB Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Power MOSFET The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation |
Original |
irf1010eo-220abo-220 | |
AN-994
Abstract: IRF1010EZ IRF1010EZL IRF1010EZS 9472
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Original |
94724cirf1010ezirf1010ezsirf1010ezl+3 | |
IRF1010EL
Abstract: ISD 1720 mosfet k 61 y1 AN-994 IRF1010E IRF1010ES
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Original |
irf1010es/lirf1010esirf1010elisd 1720+3 | |
*f1010e
Abstract: irf1010e equivalent IRF1010E
|
Original |
irf1010eo-220f1010eirf1010e equivalent | |