IPD78CN10N Search Results

80CN10N

Abstract: 78cn10n 80CN10 IPP80CN10NG IPU78CN10NG IPD78CN10N
Contextual Info: IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)

IPB79CN10NG

Abstract: IPP80CN10NG 80CN10N diode marking f13
Contextual Info: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)

Contextual Info: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 78 mW ID 13 A • Very low on-resistance R DS(on)

to262 pcb footprint

Abstract: D1804 IPB79CN10NG IPP80CN10NG IPD78CN10N 80CN10N IPP80CN10N 80CN10
Contextual Info: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)

80cn10n

Abstract: IPD78CN10N IPP80CN10NG 78cn10n D1804 IPP80CN10N
Contextual Info: IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)

D1804

Abstract: IPB79CN10NG IPP80CN10NG 80CN10N IPD78CN10N IPP80CN10N US101I
Contextual Info: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)

80CN10N

Abstract: IPB79CN10NG IPP80CN10NG IPD78CN10N G 78cn10n
Contextual Info: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 78 m: ID 13 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

79CN10N

Abstract: 80CN10N IPB79CN10NG IPP80CN10NG TO252 IEC61249-2-21 IPD78CN10N IPP80CN10N D1804 78cn10n
Contextual Info: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)

S 170 MOSFET TRANSISTOR

Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
Contextual Info: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

3bs02

Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather

PX3544

Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly

600V igbt dc to dc buck converter

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]

ICE3B0365J

Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)