IMS1403 Search Results

IMS1403P-55

Abstract: B 1403 N s1403 IMS1403P-25 TWL01 IMS1403LM IMS1403M IMS1403P-35 IMS1403S-25 IMS1403S-35
Contextual Info: IMS1403 CMOS High Performance 16K x 1 Static RAM o^m os1 D E S C R IP T IO N FEATURES • • • • • • • • • • • The INMOS 1MS1403 is a high performance 16K x 1 CMOS Static RAM. The IMS1403 provides maximum density and speed enhancements with the additional

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

K4505

Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
Contextual Info: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4

ic 7483 pin configuration diagram

Abstract: Power Distribution Board with line diagram with d
Contextual Info: IMS1403 CMOS High Performance 16K x 1 Static RAM anm os’ DESCRIPTION FE A T U R E S • INMOS' Very High Speed CMOS •Advanced Process -1.6 Micron Design Rules • 16K x 1 Bit Organization • 2 5,35,45 and 55 nsec Access Times • Fully T TL Compatible

S1403M

Contextual Info: IMS1403M IMS1403LM • ■ ■ ■ ■ ■ ■ ■ C M O S ■ ■ ■ ■ i i n i m UU U M H ig h n g 1 ^ K J O ^ P e rfo rm a n c e S ta tic R A M M IL -S T D -8 8 3 C FEATURES DESCRIPTION • INMOS1Very High Speed CMOS • Advanced Process -1 .6 Micron Design Rules

IMS1400M

Abstract: IMS1403LM IMS1403M IMS1403M-45 16kx1 static ram IMS1400
Contextual Info: IMS1403M IMS1403LM CMOS High Performance 16K x 1 Static RAM MIL-STD-883C FEATURES DESCRIPTION • INMOS1Very High Speed CM OS • Advanced Process -1 .6 Micron Design Rules • Specifications guaranteed over full military temperature range -55° C to +125° C

Contextual Info: IMS1403 CMOS High Performance 16K x 1 Static RAM mos DES C R IPTIO N FEATURES • • • • • • • • • • • INMOS'Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 16Kx1 Bit Organization 25, 35, 45 and 55 nsec Access Times Fully TTL Compatible

MD51C67

Abstract: HM1-6526 8413203YX UZ75
Contextual Info: REVISIONS LTR DATE YR4MO-DA DESCRIPTION A Add s ix new device types 03-08. Add two new vendors CAGE 61772 and 65786. E d it o r ia l changes throughout. Convert to m ilit a r y 1987 Oct 15 drawing form at. 6 Add vendor CAGE number 60911 to drawing as a s u p p lie r o f the

d2764c

Abstract: MK48Z12B-20 IMS1630 MK48Z02BU-25 VQC10 M27512F1 UPD27128D M2716F1 thomson RT 463 Schematic STR S6706
Contextual Info: m e m o r y pr o d u c ts databook SGS-THOMSON ® ® H lL Ig ? [§ © R IO (g i MEMORY PRODUCTS DATABOOK 1st E D IT IO N JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOM SON’ PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

MKB6116

Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
Contextual Info: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250

8413202YA

Abstract: 8413205YA 5962-8670512 5962-8552505X
Contextual Info: CROSS REFERENCE STANDARD MILITARY DRAWING REFERENCE INMOS SMD Number Part Number 4KX1 IMS 1203 5962-8751301 VC SMD1203S-25M 5962-8751301XC SMD1203A-25M SMD1203S-35M 5962-8751302VC 5962-8751302XC SMD1203A-35M 5962-8751303VC SMD1203S-45M 5962-8751303XC SMD1203A-45M

Contextual Info: IMS1423M u m o CMOS High Performance 4K x 4 Static RAM MIL-STD-883C s DESCRIPTION FEATURES The IN M O S IM S 1423M is a high speed 4 K x 4 C M O S static R AM proce sse d in full com pliance to M ILS TD -883C . The IM S 1423M provides m axim um density a nd perform ance enha n cem e n ts to existing 16K a pp lica ­

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

MD51C67

Abstract: 8413202RA 8413206RA 8413209SA qml-38535 IDT6167LA25 8413206SA 8413205YA 8413201 HM1-6526
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add six new device types 03-08. Add two new vendors CAGE 61772 and 65786 Editorial changes throughout. Convert to military drawing format. 87-10-15 R.P. Evans B Add vendor CAGE number 60911 to drawing as a supplier of the 05

IMS1433

Abstract: 1403-LM ceramic pin grid array package lead finish gold IMS1400M IMS1403LM IMS1403M
Contextual Info: IM S 1 4 0 3 M IM S 1 4 0 3 L M CMOS High Performance 16K x 1 Static RAM MIL-STD-883C IT IO S D ESCR IPTIO N FEA TU R ES T h e IN M O S IM S 1 4 0 3M is a high speed 16K x 1 C M O S sta tic R A M processed in full co m plian ce to M IL-S TD -683C . T h e IM S 1403M provides m axim um

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

LH5167-55

Abstract: HM65261S-5 HM65262B HY61C67-35 HY61C67-55 HY61C67-70 HY61C67L-25 HY61C67L-35 16384x1 ram 16384x1
Contextual Info: - 36 - 16K A 4 m % a TAAC £ °C (ns) TCAC max (ns) TOE max (ns) •/ TOH min (ns) C MOS S t a t i c RAM (1 6 3 8 4 x 1 ) m f TOD max (ns) TWP min (ns) TDS rein (ns) TDH min (ns) TWD (ns) TWR max (ns) V D D or V C C I DD max (raA) (V) 2 0 P I N À M I )D STANDBY

Contextual Info: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8

Contextual Info: IM S 1 4 0 3 M IM S 1 4 0 3 L M CMOS High Performance ^ ^ ^ Static RAM MIL-STD-883C III I I I I U O FEATURES DESCRIPTION • INMOS’ Very High Speed CMOS • Advanced Process -1.6 Micron Design Rules • Specifications guaranteed over full military temperature range -55° C to +125° C