HM6787 Search Results

Contextual Info: HM6787HA Series — Preliminary 65536-Word x 1-Bit High Speed Static RAM • FEATURES • Super Fast Access Time. 12/15/20ns max. • Low Power Dissipation (DC) Operating. 300mW (typ.)

Contextual Info: HM6787 Series Maintenance Only Refer to HM6787HA Series 66536-word x 1-bit High Speed Hi-BiCMOS Static RAM • FEATURES HM 6787P Series • • Super Fast Access Time: 25ns/30ns max. Low Power Dissipation (DC): Operating 180mW (typ) • • • High Driving Capability: lo c 16mA

Contextual Info: H M 6 7 8 7 S e rle s Maintenance Only 65536-word x 1-bit High Speed Hi-BiCMOS Static RAM HM6787P Series FEATURES Super Fast Access Time: 25ns/30ns max. Low Power Dissipation (DC): Operating 180mW (typ) High Driving Capability: l0 L.16nnA +5V Single Supply

HM6787-30

Abstract: HM6787HA HM6787P-25 HM6787P-30 Hitachi Scans-001
Contextual Info: Maintenance Only HM6787 Serles Refer to HM6787HA Series 65536-word x 1-bit High Speed H¡-BiCMOS Static RAM • FEATURES • • • • • • • • H M 6787P Series Super Fast Access Time: 25ns/30ns max. Low Power Dissipation (DC): Operating 180mW (typ)

Contextual Info: HM6787HA Series 65,536-Word x 1-Bit High Speed Static Random Access Memory • FEATURES ■ PACKAGE OUTLINE • 65,536-Words x 1 bit organization • 1.3 im Hi-BiCMOS process • Super fast Access time 12/15/20 ns (max. • Low power dissipation (DC) operating: 300mW (typ)

HM6787HP-15

Contextual Info: Maintenance Only HM6787H Series 66536-word x 1-bit High Speed Hi-BiCMOS Static RAM Features Refer to HM6787HA Series HM6787HP Series • Super Fast Access Time: 15ns/20ns max. • Low Power Dissipation (DC): Operating 210mW (typ) • +5V Single Supply • Completely Static Memory

HM6787HAJP-15

Abstract: HM6787HA HM6787HAP-12
Contextual Info: HM6787HA Series 65536-word x 1-bit High Speed Static Random Access Memory Features Pin Arrangement • 65536-word × 1-bit organization • 1.3 µm Hi-BiCMOS process • Super fast Access time: 12/15 ns max • Low power dissipation (DC) operating: 300 mW (typ)

Contextual Info: Maintenance Only HM6787H Series Refer to HM6787HA Series 66536-word x 1-bit High Speed Hi-BiCMOS Static RAM Features H M 6787HP Series • Super Fast Access Time: 15ns/20ns max. • Low Power Dissipation (DC): Operating 210mW (typ) • • +5V Single Supply

Contextual Info: HM6787 Series 65536-word x 1-bit High Speed Hi-BiCMOS Static RAM HM6787P Series • FEATURES • • • Super Fast Access Time: 25ns/30ns max. Low Power Dissipation (DC): Operating 180mW (typ) High Driving Capability: lO L16mA • • +5V Single Supply

HM6787HP-15

Contextual Info: HM6787H Series 66538-word x 1-bit High Spaed Hi-BiCMOS Static RAM F u tu re s • Super Fast Access Tim e: 15ns/20ns max. • Low Power Dissipation (D C ): Operating 210mW (typ) • + 5V Single Supply • Completely Static Memory No Clock or Tim ing Strobe Required

HM6787HP-15

Contextual Info: HM6787H Seríes 65536-word x 1-bit High Speed Static RAM • FEATURES • Super fast access time: 15/20 ns max. • Low power dissipation (DC) operating: 280 mW (typ.) < 4 ^ • + 5V Single supply • Completely static memory No clock or timing strobe required

6787P

Abstract: HM6787
Contextual Info: H M 6 7 8 7 S e rle s Maintenance Only Refer to HM6787HA Series 65536-word x 1-bit High Speed H¡-BiCMOS Static RAM • FEATURES • • H M 6787P Series Super Fast Access Time: 25ns/30ns max. Low Power Dissipation (DC): Operating 180mW (typ) • High Driving Capability: I o l 16 itiA

Contextual Info: HM6787HA Series 65,536-Word x 1-Bit High Speed Static Random Access Memory • FEATURES ■ PACKAGE OUTLINE • 65,536-Words x 1 bit organization • 1.3 |im Hi-BiCMOS process • Super fast Access time 12/15/20 ns max. • Low power dissipation (DC) operating: 300mW (typ)

HM6287HL-35

Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Contextual Info: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

HM53461

Contextual Info: • APPLICATION 1. 1.1 V ID EO RAM M ultiport V ideo RAM Figure 1-1 shows general idea of video RAM. Multiport video RAM provides an internal data register SAM with the mem- Effective graphic display memory is realized by using the random port of the RAM part for graphic processor drawing

658128

Abstract: hitachi eprom HMCS6800 Hitachi Transparent Conductive Transfer Film HM658128 Static Column & Page-Mode Detector time-base corrector "magnetic tape"
Contextual Info: • APPLICATIO N 1.2. Data Retention Mode and Battery Back-up System The data in RAM is destroyed at power off. How­ ever, CMOS static RAM has a data retention mode. In this mode, power consumption at standby is ex­ tremely low and supply voltage can be reduced to

4096 RAM

Abstract: 8 bit memory ic 16 BIT WORD STATIC RAM "Video RAM" 524,288 9bit HM658512 DYNAMIC RAM 16384-WORD HM628512 RAM HM63021
Contextual Info: CONTENTS • Quick Reference Guide to Hitachi IC Memories . 7 • MOS RAM.

Saratoga Semiconductor

Abstract: tw130 SABIC MB81C71 7187 auo 002 AM99C641 CY7C187 IDT7187 MCM6287
Contextual Info: Yv- ì / Saratoga Sem iconductor SSM7187 64K 65,536 Words by 1 Bit BiCMOS TTL Static RAM ADVANCE INFORMATION FEATURES • SABiC III BiCMOS Fabrication Technology • Fast Access Times 20/25ns max • Low Power Consumption 550mW 100mA max active llOm W (20mA) max standby (SSM7187L)

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

HN58C256 Series

Abstract: HN58V1001 hm514270a hm62256a HM628512 HN58C1001 Series DP-32 HN27C4096A HN62442 HM658512
Contextual Info: Package Information Contents Dual-in-line-Plastic Applicable Ics CERDIP Applicable Ics Zigzag-in-line Plastic Applicable Ics Flat Package Applicable Ics Chip Carrier Applicable Ics Package Information Dual-in-line Plastic Unit: mm • DP-18C 22.26 22.86 Max

HM6116L

Abstract: HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP
Contextual Info: • PACKAGE INFORMATION • Dual-in-line Plastic Unit: mm {inch Scale 1/1 • D P -1 6 B • D P -1 8 19 2 Í0 756) 20 32m a , J L 2 54 - 0 .2 5 C 48 - O f <■ 0 !00 ' 0 0 10> ( o 0 19 ' 0 0 0 4 ) ■J-L 0 l5 ii '"To.OlO-.«» 2 54 * 0 25 □ Í8 • 0

HM6287HLJP-35

Abstract: AKM6287P-55 HM6287HLJP-25 98C64 AKM6287CG-45 AKM6287CG-55 AKM6287LP-55 AKM6287LP-70 AKM6287P-45 AKM6287P-70
Contextual Info: - 64 4 K m fi tt fi iältlEIS CC> A 4 TAAC max ns TCAC max (ns) TOE max (ns) CMOS ••/ * TOH sin (ns) > S t a t i c RAM (6 5 5 3 6 x 1 ) TOH max (ns) TWP (ns) TDS min (ns) TDH min (ns) TWD «in (ns) TV'R max (ns.) V D D or V C C (V) 2 2 P I N M It ?" Í# ft

101490

Abstract: P22n HM50464P-12 50464 ram
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY