FST3040 Search Results

oz9966

Abstract: 30CPQ035 30CPQ040 30CPQ045 FST3040 FST3045 FST3050 MBR3035WT MBR3040WT MBR3045WT
Contextual Info: 30Amp Schottky Barrier Rectifier FST3040 - FST3050 Dim. Inches Minimum .185 .087 .059 .040 .079 .118 .016 .819 .627 .215 .790 .157 .139 .255 .170 .080 A B C D E F G H J K L M N P Q R Microsemi Catalog Number FST3040 FST3045 FST3050 Industry P a rt Number 30CPQ035

FST3040

Abstract: FST3045 FST3050 C157C
Contextual Info: 30Amp Schottky Barrier Rectifier FST3040 - FST3050 Dim. Inches Minimum .185 .087 .059 .040 .079 .118 .016 .819 .627 .215 .790 .157 .139 .255 .170 .080 A B C D E F G H J K L M N P Q R M illim eter Maximum Minimum .209 .102 .098 .055 .0 94 .133 .031 .883 .650

30CPQ05

Abstract: C157C 30CPQ035 30CPQ040 30CPQ045 FST3040 FST3045 FST3050 MBR3035WT MBR3040WT
Contextual Info: 30Amp Schottky Barrier Rectifier FST3040 - FST3050 Dim. Inches Minimum .185 .087 .059 .040 .079 .118 .016 .819 .627 .215 .790 .157 .139 .255 .170 .080 A B C D E F G H J K L M N P Q R M icrosemi Catalog Number FST3040 FST3045 FST3050 Industry P art Number R epetitive Peak

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

Contextual Info: 30Amp Schottky Barrier Rectifier FST3030 - FST3050 Dim. Inches Minim ijm M illim eter Maximum Minimum .185 .110 .059 .040 .079 .118 .016 .860 .6 2 7 .215 .7 9 5 .157 .118 .2 6 8 .175 .0 6 8 A B C D E F G H J K L M N P Q R .209 .125 .0 9 8 .0 5 5 .094 .133

scr 8a 200v

Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Contextual Info: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified

MBR140P

Abstract: 1N5819 SS14 1N5822 SS34 mbr370 MBR170 1N5822 ss24 motorola SB5100 CROSS REFERENCE LIST MBR30050CT MBR180
Contextual Info: Schottky Cross Reference List FAIRCHILD SEMI 1N5818 1N5819 1N5822 BAT54 BAT54A BAT54C BAT54S FMKA140 FMKA140 FYP1504DN FYP2004DN FYP2006DN MBR1035 MBR1045 MBR1535CT MBR1545CT MBR1635 MBR1645 MBR2035CT MBR2045CT MBR2060CT MBR2535CT MBR2545CT MBR3035PT MBR3045PT

product catalogue

Abstract: eltime.co Schrack RA 450 024 FE96MCA BS7626 FE72MIA
Contextual Info: >> moving iron >> rectified moving coil >> frequency meters >> phase sequence indicators >> null voltmeters >> wattmeters Product Catalogue >> varmeteers >> power factor meters Global Suppliers of Measurement and Protection Equipment for Industry >> electromechanical hourmeters

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

FST3030

Contextual Info: 30Amp Schottky Barrier Rectifier FST3030 - FST3050 Dim . In ch e s Minimum A B C D E Millim eter Maximum Minimum .185 .209 4.70 5 .3 0 .110 .1 2 5 2 .7 9 3 .1 8 .0 5 9 .0 4 0 .079 .0 9 8 .0 5 5 .0 9 4 .133 .031 .8 8 3 .6 5 0 1.50 1.00 2 .0 0 3.00 .4 0 0 21.8

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

c157c

Abstract: FST3030 FST3040 FST3045 FST3050 157c
Contextual Info: 30Amp Schottky Barrier Rectifier FST3030 - FST3050 Dim. Inches - Minimum C .185 .110 .0 5 9 .0 4 0 .079 .118 .016 .8 6 0 .6 2 7 .215 .7 9 5 .157 .118 .2 6 8 .175 ,0 6 8 A B C D E F G H J K L M N P Q R K— B G —• M illim e te r Maximum Minimum .209 .125

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

PK MUR 460

Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

SCR 30A 100V

Abstract: do213ab 1A 200V SCR die Fast Recovery Bridge Rectifier, 60A, 600V Ultrafast Recovery Rectifier Bridge ultraFast Recovery Bridge Rectifier rectifier bridge 300v 30a Fast Recovery Bridge Rectifier, 35A, 600V Bridge Rectifier, 35A, 600V single phase half bridge controlled rectifier scr
Contextual Info: Microsemi Corporation Colorado Product Selection Guide Spring 2004 Product Selection Guide Index Page Military Qualified Parts 1 Axial Lead Rectifiers 2 Surface Mount Rectifiers 3-5 TO220 and TO247 Rectifiers 6 Power Surface Mounts 7 Discrete Modules 8 Power Modules