FM24W256 Search Results

Contextual Info: FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

memory 256k i2c

Abstract: FM24W256
Contextual Info: Preliminary FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM24W256

Abstract: FM24W256-G FM24W256-EG AEC-Q100-002 fm24w256gtr SOIC EEPROM RIC1037
Contextual Info: Preliminary FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

fm24w256

Abstract: 6G p FM24W256-G TVR 07 spec
Contextual Info: Pre-Production FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: FM24W256 256-Kbit 32 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: Product Preview FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

fm24w256-eg

Abstract: up board 10th 2012 FM24W256-G
Contextual Info: Pre-Production FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM24W256

Contextual Info: Preliminary FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM24C256

Abstract: FM24W256 FM24C256-G
Contextual Info: FM24C256 256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: CY8CKIT-040 PSoC 4000 Pioneer Kit Guide Doc. # 001-91316 Rev. * Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): +1.408.943.2600 www.cypress.com Copyrights Copyrights Cypress Semiconductor Corporation, 2014. The information contained herein is subject to change without notice. Cypress

Contextual Info: TWR-FRAM F‐RAM Memory Module Quick Start Guide Rev. 1.0 Contents 1 Overview . 3

FM24CL64b

Abstract: FM28V202 FM25CL64B FM24C64B FM28V402-C FM24C16B FM28MV802-C FM25V FM24CL04B fm24c04b
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2011 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine