FLC097WF Search Results

FLC097WF Datasheets (2)

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Fujitsu

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLC097WF		Fujitsu	C-Band Power GaAs FET	Original	PDF	92.17KB	4
FLC097WF-E1		Fujitsu	FET: P Channel: ID 0.45 A	Original	PDF	92.17KB	4

FLC097WF Price and Stock

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EUDYNA Devices Inc. FLC097WF Trans RF MOSFET 10V 4-Pin Case WF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	FLC097WF		11			1 - 10 - 100 - 1000 - 10000 -	Get Quote
FUJITSU Limited FLC097WF RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, C BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLC097WF		1			1 $67.20 10 $67.20 100 $67.20 1000 $67.20 10000 $67.20	Buy Now

FLC097WF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general	Original	flc097wf	PDF
power dissipation fet 400W Contextual Info: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: hadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general	Original	flc097wf fcsi0598m200 power dissipation fet 400w	PDF
FLC097WF Contextual Info: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general	Original	flc097wf	PDF
FLC097WF Contextual Info: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general	Original	flc097wf fcsi0598m200	PDF
Contextual Info: FLC097WF - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-\|<jB = 28.8dBm Typ. High Gain: G ^ b = 8.5dB(Typ.) High PAE: riadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package	OCR Scan	flc097wf fcsi0598m200	PDF
Contextual Info: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general	Original	flc097wf	PDF
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	fll810iq-4c fll600iq-2 fll400ip-2 fll300il-1 +14fll200ib-1 fll300il-2 fll200ib-2 fll300il-3 fll200ib-3 fll57mk elm7785-60f fll400ip2 flc107 flk027wg flc057wg fll357 fll177 fll357me	PDF