ESAC82M Search Results

Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Maximum rating Vrrm lo *1 TS802C06 TS802C09 TP802C04 TP802C06 TP802C09 ESAC82-004 ESAC82M-004 O II CO ^1 5.0 Mass Grams Fig. No. Irrm * 3 Max. mA Dimensions -40 t o +125 0.55 If=2.5A 5.0 0.6

ESAC82M-004

Abstract: ESAC82M
Contextual Info: ESAC82M-004 10A (40V / 10A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC Insulated package by fully molding Low VF EIAJ Super high speed switching

C82M

Abstract: a433 A434
Contextual Info: ESAC82M - 0 6 1 0 A : O u tlin e D ra w in g s SCHOTTKY BARRIER DIODE : Features In su la ted package by fu lly m o ld in g , • 1&Vt iltfC Low V f C o n n e c tio n D ia g ra m S u p e r high speed s w itc h in g . H ig h re lia b ility by p la n e r d e s ig n .

AC82M-006

Abstract: ESAC82M-006
Contextual Info: ESAC82M-006 i : Outline Drawings SCH O TTKY B A R R IER DIODE ’ Features Insulated package by fully m o ld in g . *1 & V , Low V f wc Connection Diagram Super high speed sw itch in g . » 7 ^ - t- f tm iz jiiftim t t. H igh reliability by planer design.

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

ESAD81-004

Abstract: SE024 ESAD81 ESAC6
Contextual Info: Schottky-Barrier Diodes Dual package • 25307^2 oogiei^ ? ■ r-^3-07 collmer semiconductor INC 2se j> •¿3- Û ? Ratings and characteristics Maximum ratings lo “ V rrm Volts Amps. Type Thermal ratings I fsm * 2 Tj and Tstg Amps, •c I rrm * 3 Max. mA

CTX12S

Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
Contextual Info: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

010sc4m

Abstract: C120H04Q SOT227B S10SC3M s0241 C8P04Q C8P03Q BYV223V45 20/010SC4M
Contextual Info: SCHOTTKY RECTIFIERS Item Number Part Number 10 Max A VRRM IFSM (V) (A) VF IF Max @ Test (V) (A) Package Style Schottky Rectifiers, General-Purpose (Co nt' d) 5 10 SOHQ030 SOHQ035 0120SC4M SOHQ045 151MQ30 151MQ40 0180SC3M 0180SC4M 0240SC3M 0240SC4M 03S0SC3M

YW 431

Abstract: MTT 40A WL 431 pj 67 diode A431 esac82 ESAC82M-004 V125
Contextual Info: ESAC82 M -004 i o a SCHOTTKY BARRIER DIODE i Features Insulated package by fully m o ld in g , • te V F Low V F • ^ S i£ S § t Connection Diagram Super high speed sw itchin g. • &1± y is - 1 — High reliability by planer design. : Applications

erc24-06

Abstract: ERB06-15 ERC47-02 ERA91-02 erc24 ERC2406 ESAD81-004 ERA18-02 ERB29-04 ERC24-04
Contextual Info: This Material Copyrighted By Its Respective Manufacturer Fast R eco very D iodes S ingle psckage • 223ñ7^2 0001271 s ■ r-oh-oi collmer semiconductor inc ese » Ratings and characteristics Thermal ratings Ifsm * 2 Tj and Tstg Amps. •c Characteristics Te1 = 25 -0

ctx12s

Abstract: CTX12SL BYV10-40 equivalent CTX-12SL STPS3100 FMPG3F BYT200PIV400 EQUIVALENT BYD33D BYW29-200 equivalent STPS10100
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4

LT GBL406

Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
Contextual Info: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA

diode js7

Abstract: ESAC82M-004 V125 A431
Contextual Info: ESA C 82M -004 ioa S C H O TTK Y B A R R IE R D IO D E • t t A : Features In su la te d p a ckag e by fu lly m o ld in g , • iavF Lo w V F C o n n e c tio n D ia g ra m S u p e r h ig h spe ed s w itc h in g . • i— H ig h re lia b ility by p la n e r d e s ig n .

SE024

Contextual Info: C O L L ME R S E M I C O N D U C T O R INC MAE D 22367*12 D D O I SÔ I 74fl « C O L Schottky/General Purpose Diodes € " P o\~\J> Schottky “Quick Reference” Selection Guide PACKAGE S I N G L E lo A Pkg. SURFACE MOUNT SE014 SC802-04 1 1 AXIAL ERA82-004

a434

Abstract: A-432 ESAC82M-006 A432
Contextual Info: E S A C 8 2 M - 0 6 1 A * ± ' i > n i 3 r 4 * - v ! O utline D raw ings f * - K SCHOTTKY BARRIER DIODE ’ Features Insulated package by fully m o ld in g . • 1&Vp Low V f IV S S c fiE C onnection D iagram Su p e r high speed s w itc h in g . • ft n s u is a ft « t t