DT131 Search Results

Contextual Info: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TT131N TT131N TD131N DT131N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max

thyristor tt 131

Abstract: 4650N DT131N KM14 TD131N TT131N
Contextual Info: Datenblatt / Data sheet N Netz-Thyristor-Modul Phase Control Thyristor Module TT131N TT131N TD131N DT131N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max

Contextual Info: EUPEC blE » • 34032^7 OGOICHÖ 'ìlT « U P E C TT 131 N, TD 131 N, DT131 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600, 800 1000, 1200 1400 V V V Vrsm = Vrrm + 100 V Itrmsm Itavm 220 131 140 3600 3200

EUPEC TT

Abstract: powerblock TT 131 N 1200 EUPEC powerblock tt 131 tt 25 n powerblock powerblock tt 60 N EUPEC TT 131 N 12 tt131 EUPEC powerblock tt EUPEC tt 25 N 12 powerblock TT 60 N 1200
Contextual Info: EUPEC blE 3 4 0 3 2 ^ 7 OO d l D T Ö ^IT J> lUPEC TT 131 N, TD 131 N, DT131 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

Contextual Info: DT1312 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SIC 850 inverter

Abstract: relay 12v 100A DT1311 DT1312 DT1321 DT1322
Contextual Info: LUCAS LEDEX/ LUCAS fllD D • Sb07ül3 0G0G1S7 7 ^ 5 4 2 3 2 4 3 L E D E X IN C *~ L U C A S P R O D U C T S 81C 0 0 1 2 7 D DT1311/2 DT1321/2 N PN S IL IC O N PO W E R T R A N S IS T O R S The DT1311/2 and DT1321/22 transistors are NPN silicon diffused junction homogeneous

Contextual Info: Datenblatt / Data sheet N Netz-Thyristor-Modul Phase Control Thyristor Module TT131N TT131N TD131N DT131N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max

Contextual Info: DT1311 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3055

Abstract: 2N4348 Avastar 88W8787 DT1311 DT1312 DT1321 DT1322 DT3312 DT3313 DT4612
Contextual Info: Transistors Silicon npn power transistors V c E O s u s VcBO V ebo lc max. A min. V max. V DT1311 DT1312 DT1321 DT1322 40 60 40 60 60 100 60 100 12 *DT3312 *DT3313 55 140 90 160 7 4 3 •DT4612 *DT4613 60 140 100 160 7 •DT4643 140 160 *DT4652 60 ‘ DT4660

4650N

Abstract: DT131N KM14 TD131N TT131N
Contextual Info: Datenblatt / Data sheet N Netz-Thyristor-Modul Phase Control Thyristor Module TT131N TT131N TD131N DT131N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max

DT5713-PGH

Abstract: 0-10V 4.....20MA DT5703 DT5713-PGL DT5713 amplifier 40khz with gain 100 with 5v D1214 DT216 DT214-H 24V 4.....20MA
Contextual Info: 3W 3&JE. D/A CONVERTER MODULES OUTPUT CHANNELS SETTLING TIME ms OUTPUT RANGES FEATURES PAGE 8-Bit DT215 4 35 0-10V, ±10V 4-20mA output 8/ts settling options 18-5 $ 335 or $ 400 12-Bit DT212 2 3 0-10V, ±5V, ±10V High Speed Point Plotter 18-5 $ 395 MODEL

Contextual Info: P1 of 3 DT13/15 DT13/15 SERIES RIGHT ANGLE Source: Connectors for Electronic Modules DT13-2P Materials P.C.B. Mounting Mating Plugs DT15-2P Information contained herein is for reference only. Consult factory for new envelope drawings, updated specifications, and additions to product lines.

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

kuka

Abstract: DT250N eupec igbt EUPEC powerblock eupec scr kuka-2003-inhalt.qxd DATA SHEET OF IGBT IGBT Thyristor modules diode/thyristor SC 8550
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 27 Overview PowerBLOCK Diode/Thyristor Modules for Phase Control 3600 3400 3200 3000 2800 2600 2400 2000 DT150N. DT310N. 2200 * 1800 *) 20 mm VRRM [V] 25 mm 30 mm 34 mm 50 mm DT500N. DT425N. DT285N.

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

powerblock TT 95 N 1200

Abstract: powerblock DD 76 N 1200 powerblock tt 45 tt 25 n powerblock EUPEC TT 105 N 12 EUPEC tt 162 n 16 thyristor tt 250 n 16 powerblock tt 60 N powerblock td 162 powerblock TT 131 N 1200
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 23 PowerBLOCK Thyristor Modules for Phase Control Type ITRMSM A ITSM A 10 ms, Tvj max ∫i2dt A2s•103 10 ms, Tvj max ITAVM/Tc A/°C 180° el sin V TO V Tvj = Tvj max rT mΩ Tvj = Tvj max (di/dt)cr A/µs DIN

thyristor DATASHEET

Abstract: SCR Control thyristor SCR Phase Control diode DT250N thyristor control circuit THYRISTOR 1200 module scr powerblock
Contextual Info: Overview PowerBLOCK Diode/Thyristor Modules for Phase Control 3600 3400 3200 3000 2800 2600 2400 2000 DT150N. DT310N. 2200 * 1800 *) 20 mm VRRM [V] 25 mm 30 mm 34 mm 50 mm DT500N. DT425N. DT285N. DT250N. DT170N. DT210N. DT162N. DT142N.

FS450R12KE3 S1

Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Contextual Info: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment