DS1230 Search Results

Contextual Info: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or

DS1230AB

Abstract: ds1230ab date code
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230AB Jul-96 9619 H DALLAS DA079619AAA N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-17808 48 Hr

1230Y

Abstract: DALLAS SEMICONDUCTOR Ds1230
Contextual Info: D S 1230Y/A B DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT A14 11 1 281 A12 112 2711WE A7 113 2611A13 A6 114 2511A8 A5 11 5 2411A9 A4 11 6 2311A11 A3 11 7 2211ÔË A2 118 21 11A10 A1 119 201I ^ A0 11 10 1911DQ7 DQO11 11 1811DQ6

Contextual Info: DS 1230YL/BL DALLAS SEMICONDUCTOR DS1230YL/BL 256K Nonvolatile SRAM NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1230Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years m inimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23

DS1230Y

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230Y Apr-97 9713 H DALLAS DA093172 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-19480 48 Hr

transistor 16870

Abstract: transistor HR DS1230AB P-16870 hr/transistor 16870
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230AB Jan-96 9538 H DALLAS DA067510AAA N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-16812 48 Hr

DS1230Y-200 DALLAS

Abstract: EEPROM 28256 DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM ww w.dalsem i.com PIN ASSIGNMENT FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

EEPROM 28256

Abstract: 34-PIN DS1230 DS1230W DS1230W-150 DS9034PC
Contextual Info: DS1230W 3.3V 256k Nonvolatile SRAM ww w.dalsem i.com FEATU R E S • 10 years minimum data retention in the absence of external power ■ Data is automatically protected during power loss ■ Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory ■ Unlimited write cycles

Contextual Info: RELIABILITY MONITOR DS1230YL-100 JAN '99 LPM MONITOR - DALLAS DEVICE REVISION DATE CODE LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230Y A1 LPM 720 Dallas 9844 JOB_NO DESCRIPTION 105760 CONDITION 23058 PHYSICAL DIMENSIONS MIL-STD-883-2016 TOTAL: 23059 STORAGE LIFE

Contextual Info: RELIABILITY MONITOR DS1230Y-100 JAN '01 MONITOR DEVICE REVISIO DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230 A1-Y 0045 720 305435 28 Module w/SMT Fastech JOB_NO DESCRIPTION CONDITION 26427 SOLDERABILITY MIL-STD-883-2003 TOTAL: 3 26428 PHYSICAL DIMENSIONS MIL-STD-883-2016

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230Y Apr-96 9611 H DALLAS DA076935AAA N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-17208 48 Hr

Contextual Info: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of Vcc A14 11 1 A12 I1 2 A7 I1 3 A6 I1 4 A5 I1 5 A4 I1 6 A3 I1 7 A2 I1 8 • Data is automatically protected during the decrease in Vcc at power loss

1230Y

Contextual Info: D S 1230Y/A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile

DS1230Y-100

Abstract: DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-85 DS9034PC ADS1230
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory

dallas date code ds1230

Abstract: DS1230
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230 LPM w/BR1225 Oct-97 9742 H DALLAS DA097425 N/A 34 LPM STRESS/JOB NO. READPOINT (Sample Size/No. of Fails) Hi Temp Storage 70°C, No Bias

9735 h

Abstract: DS1230Y
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230Y Oct-97 9735 H DALLAS DA097816 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-20679 48 Hr

DS1230Y-120-IND

Abstract: DS1230Y-85
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,

Contextual Info: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory

EEPROM 28256

Abstract: SRAM 34 pin 28256 eeprom 28256 DS9034PC 34-PIN DS1230 DS1230W DS1230W-150 backup protect pinout
Contextual Info: DS1230W 3.3V 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

Contextual Info: DS1230W PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1230W 3.3V 256K Nonvolatile SRAM PIN ASSIGNMENT A14 1| A 12 1 1 27 11 W E A7 1 26 | A6 1 • Replaces 32K x 8 volatile static RAM, EEPROM or Flash m em ory A5 11 A4 11 • Unlimited write cycles A3 1| 7 A2

Contextual Info: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of VCc A14 • Data is automatically protected during the decrease in Vcc at power loss A12 • Directly replaces 32K x 8 volatile static RAM or EEPROM

2-5779

Contextual Info: RELIABILITY MONITOR DS1230YL-100 JAN '00 LPM MONITOR DEVICE REVISIO DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230 B1-Y 9944 720 JOB_NO DESCRIPTION 110596 34 CONDITION 25010 PHYSICAL DIMENSIONS MIL-STD-883-2016 TOTAL: 25011 STORAGE LIFE 25012 TEMP CYCLE

25814

Contextual Info: RELIABILITY MONITOR DS1230Y-200 APR '00 Monitor DEVICE REVISIO DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230 B1-Y 0005 720 118511 28 Module w/SMT Fastech JOB_NO DESCRIPTION CONDITION 25412 SOLDERABILITY MIL-STD-883-2003 TOTAL: 3 25413 PHYSICAL DIMENSIONS MIL-STD-883-2016

28256 eeprom

Abstract: DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB
Contextual Info: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM