1230Y Search Results

1230Y

Abstract: DALLAS SEMICONDUCTOR Ds1230
Contextual Info: D S 1230Y/A B DALLAS SEMICONDUCTOR FEATURES 1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT A14 11 1 281 A12 112 2711WE A7 113 2611A13 A6 114 2511A8 A5 11 5 2411A9 A4 11 6 2311A11 A3 11 7 2211ÔË A2 118 21 11A10 A1 119 201I ^ A0 11 10 1911DQ7 DQO11 11 1811DQ6

Contextual Info: DS 1230YL/BL DALLAS SEMICONDUCTOR 1230YL/BL 256K Nonvolatile SRAM NOT RECOMMENDED FOR NEW DESIGNS. SEE 1230Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years m inimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23

1230Y

Contextual Info: D S 1230Y/A B DALLAS 1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile

DALLAS SEMICONDUCTOR Ds1230

Abstract: dallas ds1230 EEPROM 28256 1230Y 34-PIN DS1230 DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS
Contextual Info: DS 1230Y/A B DALLAS 1230Y/AB SEM ICON DUCTOR FEATURES 256K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I1 A7 I1 A6 I1 A5 I1 A4 I1

EEPROM 28256

Abstract: DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS9034PC
Contextual Info: D S 1230Y /A B DALLAS 1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 1 0 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • R eplaces 32K x 8 volatile static RAM, EEPROM or

28256 eeprom

Contextual Info: D S 1230Y/AB DALLAS SEMICONDUCTOR 1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of V qC • Data is automatically protected during the decrease in Vc c at power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM

Contextual Info: 1230Y/AB DALLAS 1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

Contextual Info: 1230Y/AB DALLAS SEMICONDUCTOR FEATURES 1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of Vcc A14 11 1 A12 I1 2 A7 I1 3 A6 I1 4 A5 I1 5 A4 I1 6 A3 I1 7 A2 I1 8 • Data is automatically protected during the decrease in Vcc at power loss

Contextual Info: DALLAS 1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 • Data is automatically protected during power loss A6 I1 1 28 11 Vcc 11 2 1I 3 27 11 WE

Contextual Info: 1230Y/AB DALLAS 1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of V cc • Data is automatically protected during the decrease in V cc at power loss A14 I1 1 A12 I1 A7 I1 A6 I1 A5 I1 A4

dallas ds80c320 high speed micro guide

Abstract: DS1640
Contextual Info: 'w - l J J t f °0 _72 , TABLE OF CONTENTS Short-Form Catalog T im e k e e p in g .1 M em ory P rodu cts .

1230Y

Abstract: 1230Y-100 IM1230Y-100
Contextual Info: INNOVATIVE 1230Y-100 32K X 8 NO POWER SRAM FEATURES • Data Retention in the absence of power • Automatic data protection during power PIN CONFIGURATION failure • Data Retention over 10 years • Unlimited write cycles • Conventional SRAM write cycles

Contextual Info: 1230Y/AB DALLAS 1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or