DFN20 Search Results
DFN20 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| DFN20 |
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MECHANICAL CASE OUTLINE | Original | 26.53KB | 2 | ||
| DFN2020-6 |
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AN11304 - MOSFET load switch PCB with thermal measurement | Original | 909.42KB | 21 | ||
| DFN2020MD-6 |
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AN11304 - MOSFET load switch PCB with thermal measurement | Original | 909.42KB | 21 | ||
| DFN2.07BK | Techflex | Solid Tubing, Sleeving, Cables, Wires - Management, DURA-FLEX 2.07" BLACK 100' | Original | 2 | |||
| DFN2.07BK100 | Techflex | SLEEVING 2.07"" ID POLY 100' BLK | Original | 1.73MB | |||
| DFN2.07BK50 | Techflex | Solid Tubing, Sleeving, Cables, Wires - Management, DURA-FLEX 2.07" BLACK 50' | Original | 2 |
DFN20 Price and Stock
Vishay Intertechnologies 6DFN20A-M3/I600W,20V 5%, DFN3820A TVS - Tape and Reel (Alt: 6DFN20A-M3/I) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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6DFN20A-M3/I | Tape & Reel | 15 Weeks | 14,000 |
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Buy Now | |||||
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6DFN20A-M3/I |
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Get Quote | ||||||||
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6DFN20A-M3/I | Reel | 14,000 |
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Vishay Intertechnologies 6DFN20CA-M3/I600W,20V 5%, DFN3820A BIDIR TVS - Tape and Reel (Alt: 6DFN20CA-M3/I) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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6DFN20CA-M3/I | Tape & Reel | 7 Weeks | 14,000 |
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Buy Now | |||||
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6DFN20CA-M3/I | 13,996 |
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Buy Now | |||||||
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6DFN20CA-M3/I | Cut Tape | 40 | 5 |
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| 6DFN20CA-M3/I | Tape & Reel | 40 | 100 |
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6DFN20CA-M3/I | Reel | 14,000 |
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Buy Now | ||||||
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6DFN20CA-M3/I | 14 Weeks | 14,000 |
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Get Quote | ||||||
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6DFN20CA-M3/I | 16 Weeks | 14,000 |
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Get Quote | ||||||
Vishay Intertechnologies 2KDFN20A-M3/H- Tape and Reel (Alt: 2KDFN20A-M3/H) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2KDFN20A-M3/H | Tape & Reel | 1,500 |
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2KDFN20A-M3/H | 3,000 |
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2KDFN20A-M3/H | Reel | 3,000 |
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Buy Now | ||||||
Vishay Intertechnologies 2KDFN20A-M3/I- Tape and Reel (Alt: 2KDFN20A-M3/I) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2KDFN20A-M3/I | Tape & Reel | 6,000 |
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Buy Now | ||||||
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2KDFN20A-M3/I |
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Get Quote | ||||||||
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2KDFN20A-M3/I | Reel | 6,000 |
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Buy Now | ||||||
Vishay Intertechnologies 2KDFN20CA-M3/H- Tape and Reel (Alt: 2KDFN20CA-M3/H) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2KDFN20CA-M3/H | Tape & Reel | 1,500 |
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Buy Now | ||||||
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2KDFN20CA-M3/H | 3,000 |
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Buy Now | |||||||
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2KDFN20CA-M3/H | Reel | 3,000 |
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Buy Now | ||||||
DFN20 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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pmpb15xpdfn2020md-6ot1220 | |
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Contextual Info: N3 PTVSxU1UPA series HU SO 300 W Transient Voltage Suppressor Rev. 1 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description 300 W unidirectional Transient Voltage Suppressor TVS in a DFN2020-3 (SOT1061) leadless medium power Surface-Mounted Device (SMD) plastic package, designed for |
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dfn2020-3ot1061aec-q101 | |
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Contextual Info: DF N2 020 -6 PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. |
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pbss4160panpdfn2020-6ot1118pbss4160pan+2 | |
DFN2020
Abstract: DMS2120LFWB power diode package DFN3020 632 diode DMP2160UFDB
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dms2220lfdbdms2120lfwbdfn2020dfn3020+3 | |
DFN2020-6Contextual Info: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using |
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pmdpb55xpdfn2020-6ot1118 | |
marking code 2QContextual Info: PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. |
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pbss4260panpdfn2020-6ot1118pbss4260pan+3 | |
NXP SMD TRANSISTOR MARKING CODE s1Contextual Info: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 2 — 2 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using |
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pmdpb55xpdfn2020-6ot1118nxp smd transistor marking code s1 | |
SMD TRANSISTOR MARKING 2e
Abstract: 2e SMD PNP TRANSISTOR
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pbss5130papdfn2020-6ot1118pbss4130panp+4 | |
npn transistor footprintContextual Info: PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. |
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pbss4260pandfn2020-6ot1118pbss4260panp+3 | |
smd diode marking 2U
Abstract: smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd
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pmdpb95xnedfn2020-6ot1118smd diode marking 2u+8 | |
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Contextual Info: MSWSH-020-24-DFN2020 PIN DIODE SHUNT SWITCH ELEMENT 1 2 3 Molded Plastic DFN2020 Description Features • • • • A broadband, high linearity, medium power shunt switch element in a 2.0 X 2.0 mm DFN package. This device is designed for wireless telecommunications infrastructure |
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mswsh-020-24-dfn2020dfn2020a17162 | |
marking N7Contextual Info: DMN1019UFDE Green 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max 12V 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package ID max TA = +25°C U-DFN2020-6 Type E 11A 10 9A 8A 5A • • |
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dmn1019ufdeaec-q101u-dfn2020-6ds35561+1 | |
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Contextual Info: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 2 July 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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pmpb40snadfn2020md-6ot1220aec-q101 | |
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Contextual Info: DF N 20 20 MD -6 PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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pmpb85eneadfn2020md-6ot1220aec-q101 | |
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DMN2015UFDEContextual Info: DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max Package 11.6mΩ @ VGS = 4.5V 20V 15mΩ @ VGS = 2.5V ID max TA = +25°C 10.5A U-DFN2020-6 Type E 9.4A Description Applications • • • 0.6mm profile – ideal for low profile applications |
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dmn2015ufdeu-dfn2020-6aec-q101ds35560 | |
PMDPB70ENContextual Info: PMDPB70EN 30 V, dual N-channel Trench MOSFET Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using |
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pmdpb70endfn2020-6ot1118 | |
marking code 1sContextual Info: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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pmpb33xpdfn2020md-6ot1220marking code 1s | |
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Contextual Info: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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nx2020p1dfn2020md-6ot1220 | |
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Contextual Info: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. |
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pbss5160papdfn2020-6ot1118pbss4160panp+2 | |
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Contextual Info: 0' SOT1220 ' 1 DFN2020MD-6; reel pack; standard product orientation; 12NC ending 115 Rev. 2 — 19 February 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape QA Seal Preprinted ESD warning PQ-label permanent) Circular sprocket holes opposite the |
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ot1220dfn2020md-6001aak603dfn2020 | |
marking n8Contextual Info: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary ID max TA = +25°C RDS ON max Package 38mΩ @ VGS = 10V U-DFN2020-6 Type E V(BR)DSS 60V Features and Benefits 47mΩ @ VGS = 4.5V 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
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dmn6040sfdeu-dfn2020-6aec-q101ds35792+1 | |
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Contextual Info: PMPB13XNE 30 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using |
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pmpb13xnedfn2020md-6ot1220 | |
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Contextual Info: PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. |
Original |
pbss4130panpdfn2020-6ot1118pbss4130pan+2 | |
NXP SMD TRANSISTOR MARKING CODE s1Contextual Info: 020 -6 PMDPB58UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic |
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pmdpb58upedfn2020-6ot1118nxp smd transistor marking code s1 | |