DMN2015UFDE Search Results
DMN2015UFDE Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| DMN2015UFDE | Diodes Incorporated | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Original | 205.23KB | 6 | ||
| DMN2015UFDE-7 | Diodes Incorporated | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 10.5A U-DFN | Original | 6 |
DMN2015UFDE Price and Stock
Zetex / Diodes Inc DMN2015UFDE-7-55Trans MOSFET N-CH 20V 10.5A 6-Pin UDFN EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMN2015UFDE-7-55 | 6,000 | 6,000 |
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Diodes Incorporated DMN2015UFDE-7- Tape and Reel (Alt: DMN2015UFDE-7) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMN2015UFDE-7 | Tape & Reel | 40 Weeks | 3,000 |
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DMN2015UFDE-7 | Cut Tape | 1,445 | 1 |
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| DMN2015UFDE-7 | Tape & Reel | 1,445 | 100 |
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DMN2015UFDE-7 | Bulk | 50 |
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DMN2015UFDE-7 | 8,935 | 1 |
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DMN2015UFDE-7 | 7,148 |
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| DMN2015UFDE-7 | 7,148 |
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Buy Now | ||||||||
| DMN2015UFDE-7 | 1,329 |
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DMN2015UFDE-7 | 3,000 |
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Get Quote | |||||||
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DMN2015UFDE-7 | 3,000 | 42 Weeks | 3,000 |
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DMN2015UFDE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
DMN2015UFDEContextual Info: DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max Package 11.6mΩ @ VGS = 4.5V 20V 15mΩ @ VGS = 2.5V ID max TA = +25°C 10.5A U-DFN2020-6 Type E 9.4A Description Applications • • • 0.6mm profile – ideal for low profile applications |
Original |
dmn2015ufdeu-dfn2020-6aec-q101ds35560 | |
DMN2015UFDEContextual Info: DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits RDS ON max ID max TA = 25°C 11.6mΩ @ VGS = 4.5V 10.5A 15mΩ @ VGS = 2.5V 9.4A V(BR)DSS • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm |
Original |
dmn2015ufdeaec-q101ds35560 | |
DMN2015UFDE-7Contextual Info: DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features RDS(ON) max Package 11.6mΩ @ VGS = 4.5V 20V 15mΩ @ VGS = 2.5V ID max TA = +25°C 10.5A U-DFN2020-6 Type E 9.4A Description Applications • • • 0.6mm profile – ideal for low profile applications |
Original |
dmn2015ufdeu-dfn2020-6aec-q101ds35560+1 | |
DMN2015UFDEContextual Info: DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits RDS ON max ID max TA = 25°C 11.6mΩ @ VGS = 4.5V 10.5A 15mΩ @ VGS = 2.5V 9.4A V(BR)DSS • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm |
Original |
dmn2015ufdeaec-q101ds35560 | |
NX3008
Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
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Original |
aon2240aon2401aon2405aon2406+14 | |
AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
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Original |
2000/53/ec2002/95/ec2011/65/eusor/2014-254+12 | |
DMN4060SVT
Abstract: DMP6180SK3 DMN4036LK3
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Original |
diode8lsd-13dmn6040sk3-13dmn6066sss-13dmp2008ufg-13+9 |