DMN1019UFDE Search Results
DMN1019UFDE Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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DMN1019UFDE |
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12V N-CHANNEL ENHANCEMENT MODE MOSFET | Original | 216.65KB | 7 | ||
DMN1019UFDE-7 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N CH 12V 11A U-DFN2020-6E | Original | 7 |
DMN1019UFDE Price and Stock
Diodes Incorporated DMN1019UFDE-7MOSFET N CH 12V 11A U-DFN2020-6E |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMN1019UFDE-7 | Cut Tape | 203,963 | 1 |
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DMN1019UFDE-7 | Reel | 12 Weeks | 3,000 |
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DMN1019UFDE-7 | 3,355 |
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DMN1019UFDE-7 | 12,000 | 12 Weeks | 3,000 |
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DMN1019UFDE-7 | Cut Tape | 3,340 | 1 |
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DMN1019UFDE-7 | 1 |
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DMN1019UFDE-7 | 7 |
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DMN1019UFDE-7 | 12 Weeks | 3,000 |
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DMN1019UFDE-7 | 14 Weeks | 3,000 |
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DMN1019UFDE-7 | 6,000 | 3,000 |
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DMN1019UFDE-7 | 6,000 | 1 |
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Zetex / Diodes Inc DMN1019UFDE-7Trans MOSFET N-CH 12V 11A T/R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMN1019UFDE-7 | 12,000 | 3,000 |
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Analog Devices Inc DMN1019UFDEPeripheral ICs |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMN1019UFDE | 296 |
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DMN1019UFDE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking N7Contextual Info: DMN1019UFDE Green 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max 12V 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package ID max TA = +25°C U-DFN2020-6 Type E 11A 10 9A 8A 5A • • |
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DMN1019UFDE AEC-Q101 U-DFN2020-6 DS35561 marking N7 | |
Contextual Info: DMN1019UFDE Green 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max 12V 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package ID max TA = +25°C U-DFN2020-6 Type E 11A 10 9A 8A 5A • • |
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DMN1019UFDE U-DFN2020-6 AEC-Q101 DS35561 | |
Contextual Info: DMN1019UFDE 12V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features RDS(ON) max Package 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V 12V ID max TA = +25°C • 0.6mm profile – ideal for low profile applications |
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DMN1019UFDE U-DFN2020-6 AEC-Q101 DS35561 | |
MARKING N7Contextual Info: DMN1019UFDE 12V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS 12V Features and Benefits RDS(ON) max ID max TA = 25°C 10mΩ @ VGS = 4.5V 11A 12mΩ @ VGS = 2.5V 10A 14mΩ @ VGS = 1.8V 9A 18mΩ @ VGS = 1.5V 8A 41mΩ @ VGS = 1.2V 5A • • • • • • • • |
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DMN1019UFDE AEC-Q101 DS35561 MARKING N7 | |
NX3008
Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
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AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N | |
AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
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2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 |