D1014 Search Results

D1014

Abstract: BV-70
Contextual Info: POIN T NINE D1014 D1014 TetraFET TetraFET Te c h n o l o g i e s , I n c . 20W - 28V - 500MHz GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET FEATURES • METAL GATE • • • • • ABSOLUTE MAXIMUM RATINGS EXTRA LOW Crss BROAD BAND SIMPLE BIAS CIRCUITS

Contextual Info: b.QE ]> • Û1331S7 GG0LH34 flbO M S r iL B SEUELAB PLC T ' H - Z S SEMELAB D1014UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DM O SRFFET 20W -28V-400M H z SINGLE ENDED M ECH A N ICA L DATA Dimensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: TetraFET M il e FFe llll D1014UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA * !2 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 400MHz SINGLE ENDED N typ _iB L !l!3 x _Q_ (2 pis) I j pU (2 pls| FEATURES -U f~ T M I E • SIMPLIFIED AMPLIFIER DESIGN

D1014UK

Abstract: 4049 G200 20swg VG13 VG10
Contextual Info: TetraFET D1014UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: nil Vrr r = mi TetraFET SEM E D1014UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2 0 W -2 8 V -4 0 0 M H z SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DP

D1014UK

Contextual Info: TetraFET D1014UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

4049

Abstract: D1014UK VG10 t4 0560 c
Contextual Info: TetraFET D1014UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: D10147 1 2 8 - w ord x l - b i t Random A c c e s s M em ory The H D10147 is a fast 128-word x 1-bit R A M . Bit selection is achieved by means of a 7-bit address, AO through A6. The active-low chip selects and fast chip select access time allow easy memory

D1014UK

Contextual Info: TetraFET D1014UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED C N ty p  A B ! D ( 2 p ls ) F ( 2 p ls ) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1014UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1014UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D1014UK

Contextual Info: TetraFET D1014UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

transistor mhz s-parameter low-noise VHF

Abstract: enamelled copper wire D1014UK G200 B62152A7X2
Contextual Info: TetraFET D1014UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

WD1015

Abstract: WD1010 WD1002-05 WD1014 WD1100-06 WD2797 WD1100 SDH7 WD1002
Contextual Info: WESTERN O R P O R DIGITAL A T I O N D1014 Error Detection/Support Logic Device FEATURES 32-BIT ECC POLYNOMIAL BURST CORRECTION TO 11-BITS MULTIPLE ERROR BURST DETECTION DATA TRANSFER RATE OF 5-MBITS/SECOND PROCESSES C H E C K /S Y N D R O M E BITS IN 2-BIT

12c675

Abstract: 8541P Inventec tpa6017 sc1470I LPC47N249 *8541p L1019 R502 3443 070435FR015
Contextual Info: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-10 - ODEM 11-14 - DDR 15-18 - ATI_M10_P 19-20 - VGA DDR 21 -LCD INTERFACE 22-24- ICH4-M 25 - HDD CONNECTOR 26 - CD-ROM CONNECTOR

UC2844B

Abstract: 0/UC3645B UC3645B
Contextual Info: M M O T O R O L A — — UC3844B, 45B UC2844B, 45B High Performance Current Mode Controllers The UC3844B, UC3845B series are high performance fixed frequency current mode controllers. They are specifically designed for O ff-Line and d c -to -d c converter applications offering the designer a cost-effective

BFM12

Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Contextual Info: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db

D1014

Abstract: FTD1014
Contextual Info: Ordering number : ENN7020 D1014 SANYO Semiconductors DATA SHEET D1014 P-Channel Silicon MOSFET Load Switching Applications Package Dimensions • • • [D1014] 3.0 0.65 8 0.425 5 4.5 6.4 0.5 • Low ON-resistance. 2.5V drive. Mounting height 1.1mm.

Contextual Info: FEATURES FUNCTIONAL BLOCK DIAGRAM Small and thin 4 mm x 3 mm × 1 mm surface-mount package Omnidirectional response Very high SNR: 65 dBA Sensitivity of −26 dBFS Extended frequency response from 100 Hz to 16 kHz Low current consumption: 900 µA Sleep mode for extended battery life, <1 µA consumption

61a3 mosfet

Abstract: m21 sot23 transistor fairchild aa11 L0DA A10 sot23-5 transistor m21 sot23 h1 sot23-5 honda 20 pin connector pinout ADSP-TS101S f21 diode sot23
Contextual Info: ADSP-TS101S EZ-KIT Lite Evaluation System Manual Revision 1.1, March 2004 Part Number 82-000635-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2004 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written

MSC 1691 AI

Abstract: WD1771 WD1793 WD1691V western digital FD1791 WD1771-01 sj 8207 FD1770 WD1691 WG1 smd
Contextual Info: 1984 Storage Managem ent Products Handbook Making The Leading Edge Work For You. This handbook is designed for you, the engineer. It’s intended to be a useful tool, enabling you to make a preliminary evaluation of our products and later, with samples in hand, design our products

D1014

Contextual Info: D1014 P- Channel Silicon MOS FET TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC

TIR1000

Abstract: TL16C550C DECODER WORKS
Contextual Info: TIR1000 STAND-ALONE IrDA ENCODER AND DECODER _ • Adds Infrared IR Port to Universal Asynchronous Receiver Transmitter (UART) • Compatible with Infrared Data Association (IrDA) & Hewlett Packard Serial Infrared (HPSIR) • Provides 1200 bps to 115 kbps Data Rate

Contextual Info: VSC6134 Datasheet Features ● ● ● ● ● ● ● ● ● ● Two ITU-T G.709-compliant processors GR253-compliant STS192 section and line processor OTU synchronous and asynchronous mapping 10 GbE transport with RMON MIB per IEEE 802.3 ITU-T G.975 Reed Solomon encoder and decoder