990916TM2FXHD Search Results
990916TM2FXHD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
D1014Contextual Info: FTD1014 P- Channel Silicon MOS FET TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC |
Original |
FTD1014 --10V, FTD1011 990916TM2fXHD D1014 | |
|
Contextual Info: FTD1011 P- Channel Silicon MOS FET TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC |
Original |
FTD1011 --10V, 990916TM2fXHD |