D1008UK Search Results

D1008UK

Contextual Info: fciDE ì> _ m 01 331 07 0000 ^2 4 =111 • SfILB SEMELAB PLC ^ -3 l-Z ia SEMELAB D1008UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 40W -28V -500M H Z PUSH-PULL MECHANICAL DATA Dimensions FEATURES PIN1 SOURCE COMMON PIN2 DRA1N1

D1008UK

Contextual Info: TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

D1008UK

Abstract: D1008
Contextual Info: TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1008UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

FT50-75

Abstract: diode d1008 FT50 D1008UK UT85 UT85-15
Contextual Info: TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: II I TetraFET Ë ^ = II I SEME D1008UK LAB METAL GATE RF SILICON FET MECHANICAL DATA B ^ 2 P‘S A - 2 ^ GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH-PULL 3 r- G (4 pis) FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J * I - W

D1008UK

Contextual Info: TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: D1008UK Transistors N-Channel UHF/Microwave MOSFET V BR DSS (V)70 V(BR)GSS (V)20.0 I(D) Max. (A)10 P(D) Max. (W)175 Maximum Operating Temp (øC)200õ I(DSS) Min. (A) I(DSS) Max. (A)2.0m @V(DS) (V) (Test Condition)28.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.1.6

Contextual Info: nil Vrr r = mi TetraFET D1008UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4 0 W -2 8 V -5 0 0 M H z PUSH-PULL I 3 2 p i s . rs • I'b l! JU— 4 ir — G (4 p is ) 4 FEATURES u • SIMPLIFIED AMPLIFIER DESIGN

diode d1008

Abstract: D1008UK UT85 UT85-15 FT50-75
Contextual Info: TetraFET D1008UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

FT50-75

Abstract: UT85 coax D1008UK UT70 FT50 UT85-15 UT70-25 6.8k d 966 UT85 50
Contextual Info: TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

BFM12

Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Contextual Info: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

dinverter 768r

Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

GNS430

Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Contextual Info: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon