D1008 Search Results

D1008UK

Contextual Info: fciDE ì> _ m 01 331 07 0000 ^2 4 =111 • SfILB SEMELAB PLC ^ -3 l-Z ia SEMELAB D1008UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 40W -28V -500M H Z PUSH-PULL MECHANICAL DATA Dimensions FEATURES PIN1 SOURCE COMMON PIN2 DRA1N1

XD1008

Abstract: XD1008-QH mmic distributed amplifier XD1008-QH-0G00
Contextual Info: 30.0 kHz-32.0 GHz GaAs MMIC Distributed QFN Packaged Amplifier D1008-QH December 2009 - Rev 08-Dec-09 Features 17 dB Small Signal Gain 24 dBm Saturated Power 3.0 dB Noise Figure Unconditional Stability over Temperature Range 4x4mm Fully Molded Standard QFN Package

XD9001

Abstract: D1008-BD XD1008-BD-000V mmic distributed amplifier XD1008 DM6030HK TS3332LD
Contextual Info: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing

D1008UK

Contextual Info: TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

TL711

Abstract: tl810c L811 TL811 TL811C TL811M
Contextual Info: LINEAR INTEGRATED CIRCUITS • • • TYPES TL811M , TL811C DUAL-CHANNEL DIFFERENTIAL COMPARATORS WITH STROBES D1008, MARCH 1971-REVÌSED AUGUST 1983 F ast R esponse T im es TL811M . . . J DUAL-IN-LINE PACKAGE Im proved V o lta g e A m p lific a tio n and O ffse t

D1008UK

Abstract: D1008
Contextual Info: TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1008UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

XD9001

Contextual Info: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier October 2008 - Rev 22-Oct-08 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing

FT50-75

Abstract: diode d1008 FT50 D1008UK UT85 UT85-15
Contextual Info: TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: II I TetraFET Ë ^ = II I SEME D1008UK LAB METAL GATE RF SILICON FET MECHANICAL DATA B ^ 2 P‘S A - 2 ^ GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH-PULL 3 r- G (4 pis) FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J * I - W

D1008UK

Contextual Info: TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: MA6001D10000000 P-Ch 60V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage Rev A.01 D100809 TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210

Contextual Info: D1008UK Transistors N-Channel UHF/Microwave MOSFET V BR DSS (V)70 V(BR)GSS (V)20.0 I(D) Max. (A)10 P(D) Max. (W)175 Maximum Operating Temp (øC)200õ I(DSS) Min. (A) I(DSS) Max. (A)2.0m @V(DS) (V) (Test Condition)28.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.1.6

Contextual Info: nil Vrr r = mi TetraFET D1008UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4 0 W -2 8 V -5 0 0 M H z PUSH-PULL I 3 2 p i s . rs • I'b l! JU— 4 ir — G (4 p is ) 4 FEATURES u • SIMPLIFIED AMPLIFIER DESIGN

diode d1008

Abstract: D1008UK UT85 UT85-15 FT50-75
Contextual Info: TetraFET D1008UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES O • SIMPLIFIED AMPLIFIER DESIGN H M I J N • SUITABLE FOR BROAD BAND APPLICATIONS

FT50-75

Abstract: UT85 coax D1008UK UT70 FT50 UT85-15 UT70-25 6.8k d 966 UT85 50
Contextual Info: TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B 2 pls K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS

XD9001

Abstract: D1008-BD XD1008-BD XD-100 mmic distributed amplifier mmic s2 transistor BD 140 XD1008 DM6030HK TS3332LD
Contextual Info: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier February 2009 - Rev 05-Feb-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing

TMW1008

Abstract: TOKO TMW1008 D1008 transistor diode d1008 802.11b DSSS arib STD-33 D1008-TN-0102-03 circuit diagram for pcmcia
Contextual Info: TMW1008 Series 11MBPS WLAN PCMCIA CARD T DESCRIPTION TOKO’s TMW1008 series PCMCIA Client Adapter is a high-performance, cost-effective, secure and easily managed solution for IEEE 802.11b Wireless LANs. FEATURES IEEE 802.11b – 11 Mbps PCMCIA Type II CardBus Interface 5V DC

Contextual Info: AC Line Filters SU Coils, SU 10VD High Frequency Type Overview Applications The KEMET SU Coils, SU 10VD High Frequency Type AC line filters are offered in a wide variety of sizes and specifications. • Consumer Electronics • Common mode choke Benefits – High Frequency Type

submersible motor winding formula

Abstract: 3G3MV A2007 Manual 3G3MV-A4040 3G3MV manual inverter omron sysdrive 3G3MV-A2004
Contextual Info: Cat. No. I527-E2-02 USER’S MANUAL SYSDRIVE 3G3MV Multi-function Compact Inverter Thank you for choosing this SYSDRIVE 3G3MV-series product. Proper use and handling of the product will ensure proper product performance, will lengthen product life, and may prevent possible accidents.

Contextual Info: Ordering number : ENA1374A LA4815VH Monolithic Linear IC Monaural Power Amplifier Overview The LA4815VH incorporates a 1-channel power amplifier with a wide operating supply voltage range built into a surface-mounted package. This IC also has a mute function and requires only a few external components, making it

MCP67MV

Abstract: RTS5117 MCP67MV- A2 12VSUS IT8511TE D1703 D1804 D1803 asus F9DC
Contextual Info: 5 4 3 2 1 F9DC BLOCK DIAGRAM THERMAL SENSOR G781 BATTERY TYPE Page 5 D D 3S1P 3S2P FAN CTRL Page 5 AC & BAT CON Page 47 CPU S1g1 GDDR2 16Mx16 x4 DDR2 16M*16-2.5 1.8V Page42 INFINEON DDR2 SDRAM 667MHz Page2,3,4 DDR2 667 SODIMM X2 +1.8V +0.9VS Page11,12,13

mcp67m

Abstract: MCP67MV MCP67D MCP67MV- A2 c5304 asus nvidia mcp67 MCP67 C9236 ricoh r5c833
Contextual Info: A B C D E A8N_A8Dc AMD/MCP67MV/MCP67D BLOCK DIAGRAM 1 BATTERY TYPE Sub block Diagram / BOM option 1 3S2P 64 POWER SEQENCE 2 . CPU CPU CAP 5 AMD Turion 64 F/G DDR2 533/667/800 SODIMM X2 3,4 LFB 2 LFB LFB HOST BUS DVI Dual CH. 47 CRT & TV CON 46 LFB VGA CON

RT9713

Abstract: C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU
Contextual Info: VAIL SI2-BUILD-FINAL 2004.08.31 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : VAIL1.0 SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX2 67 TABLE OF CONTENTS