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Catalog Datasheet	Type	Document Tags	PDF
XD9001 Abstract: D1008-BD XD1008-BD-000V mmic distributed amplifier XD1008 DM6030HK TS3332LD Contextual Info: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier March 2009 - Rev 19-Mar-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing	Original	19-Mar-09 D1008-BD MIL-STD-883 XD1008 XD9001. XD9001 D1008-BD XD1008-BD-000V mmic distributed amplifier DM6030HK TS3332LD	PDF
XD9001 Contextual Info: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier October 2008 - Rev 22-Oct-08 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing	Original	22-Oct-08 D1008-BD MIL-STD-883 XD1008-BD-000V XD1008-BD-EV1 XD1008 XD9001	PDF
XD9001 Contextual Info: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier October 2008 - Rev 30-Oct-08 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing	Original	30-Oct-08 D1008-BD MIL-STD-883 XD1008-BD-000V XD1008-BD-EV1 XD1008 XD9001	PDF
XD9001 Abstract: D1008-BD XD1008-BD XD-100 mmic distributed amplifier mmic s2 transistor BD 140 XD1008 DM6030HK TS3332LD Contextual Info: 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier February 2009 - Rev 05-Feb-09 D1008-BD Features Chip Device Layout 15 dB Gain 22.5 dBm P1dB at 22 GHz 4.5 dB Noise Figure at 26 GHz Unconditional Stability over Temperature Range 100% On-Wafer RF, DC and Output Power Testing	Original	05-Feb-09 D1008-BD MIL-STD-883 XD1008 XD9001. XD9001 D1008-BD XD1008-BD XD-100 mmic distributed amplifier mmic s2 transistor BD 140 DM6030HK TS3332LD	PDF