D07SS Search Results

BB112

Abstract: am variable capacitance diode 8b112 NA 440
Contextual Info: b3E T> m - bbSB^iM D07SSÔM S3S « S I C 3 NAPC/PHILIPS SEMICOND BB112 - SILICON PLANAR VARIABLE CAPACITANCE DIODE T h e B B 1 12 is a single 9 V variable capacitance diode in a plastic encapsulation fo r applicatio n in tu n in g circuits in a.m . receivers. T h e diodes are supplied in m atched sets o f three items.

1N5722

Abstract: TIL604 til24 TIL23 1N5724 1N5726 D974 Phototransistors 1N5722 1N5725 00191
Contextual Info: TEXAS INSTR OPTO 25E D • a ci b ] i 7 2 t i D07SS44 5 1N5722 THRU 1N572S N-P-N PLANAR SILICON PHOTOTRANSiSTORS D 9 74 , M A R C H 1 9 7 2 - R E V IS E D A P R IL T9 8 i

cimr100

Contextual Info: LM3080 SflE » £3 National ÆM Semiconductor LS011E4 D07SSb3 m WÊHSŒ NATL SEriICOND LINEAR LM3080 Operational Transconductance Amplifier General Description Features The LM3080 is a programmable transconductance block in­ tended to fulfill a wide variety of variable gain applications.

3l4 diode

Contextual Info: r Z ^ 7 Z S G S - T H O M S O N # M G IF ä < m [i< m @ R !]D S S T D 3 N 2 5 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss R d S o ii 250 V STD3N25 Id <2 0. 3 A • . . . . TYPICAL R ds(oii) = 1 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

lv14

Abstract: 74lv140 74LV14 74LV14DB 74LV14N 74LV14D 74LV14PW philips pit
Contextual Info: Philips Semiconductors Product Specification Hex inverting Schmitt-trigger FEATURES • • • • Optimized fo r Low Voltage applications: 1.0 to 3.6 V Accepts TTL input levels between Vcc = 2.7 V and Vcc = 3.6 V Typical VOLP output ground bounce < 0.8 V at Vcc = 3.3 V,

Contextual Info: / T ^ 7 T S G S -T H O M S O N / IM Iim ö [g [llg ( g iM M [ l( g g T D E 1 8 9 7 R T D E 1 8 9 8 R 0.5AHIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH PRELIMINARY DATA . • . ■ . ■ ■ . ■ ■ ■ 0.5A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE

74LVC544

Abstract: 74LVC544D 74LVC544DB 74LVC544PW 75542
Contextual Info: Philips Semiconductors Product Specification Octal registered transceiver; 3-state; inverting FEATURES • • • • • • • • • 74LVC544 QUICK REFERENCE DATA GND = 0 V; T^nb = 25 °C; t, = t, < 2.5 ns Wide supply voltage range of 1.2 V to 3.6 V

LM3900

Abstract: LM3301N power amplifier circuit diagram with ic lm3900 an lm3900 lm2900
Contextual Info: bSDllSM Ü07SS4S T73 « N S C 2 LM2900/LM3900/LM3301 SflE D NATL SEMICOND LINEAR gg National Semiconductor 'T - 'T \ - I ° LM2900/LM3900/LM3301 Quad Amplifiers G eneral Description Features The LM2900 series consists of four independent, dual input, Internally compensated amplifiers which were designed

74LVC652

Abstract: 74LVC652D 74LVC652DB 74LVC652PW
Contextual Info: Philips Semiconductors Product Specification O ctal transceiver/reg ister w ith dual enable; 3-state FEATURES • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1 A. Flow-through pin-out architecture Inputs accept voltages upto