til24
Abstract: TIL23 H-1032 TIL25
Contextual Info: TIL23, TIL24, TIL25 PHI GALLIUM ARSENIDE INFRARED-EMITTING DIODES D 2 13 2 , F E B R U A R Y 1 9 7 0 - R E V IS E D A P R IL 1987 • Output Spectrally Compatible with Silicon Sensors • High Power Efficiency • High Power Output • Sm all Size Permits Matrix A sse m bly Directly into Printed Circuit Boards
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til78 phototransistor
Abstract: TIL81 Phototransistor TIL81 TIL78 til99 Phototransistor TIL78 TIL38 photodiode TIL32 Phototransistor til100
Contextual Info: Optoelectronics ALight Emitters Device Tyoe TIL23 TIL24 TIL25 TIL31 TIL33 TIL34 TIL32 Power Output min. @ IF mW mA 0.4 50 1.0 50 0.7 50 3.3 100 2.5 100 1,6 100 0.5 20 8HP «VP 35’ 3535* 10* 80* 10' 35’ max. V 1.5 1.5 1.5 1.75 1.75 1.75 1.6 TIL38 6.0 60°
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til23til24til25til31+15til33til34til32til38ls600ls400til78 phototransistortil81phototransistor til81til78til99phototransistor til78photodiode til32phototransistortil100
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TIL112
Abstract: TIL115 TIL102 TIL103 4n23 LS600 TIL118 TIL23 SDA20 TIL113
Contextual Info: Optoelectronics f^ S D A 2 0 Ready-mounted cards containing LS600 Silicon sensor and the spectrally matched Gallium Arsenide Source Type TIL23 Id max. leakage current V C E sensor 30V H O iF(em itter) - 0 nA VF max. static forw ard voltage iF(em itter) ~ 50mA
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ls600til23200vasda20+11sda20/1sda20/2040agetil102til102atil103til112til1154n23til118til113
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TIL78
Abstract: til32 til78 phototransistor TIL139 TIL145 TIL143 TIL78 circuit TIL78 current TIL138 TIL147
Contextual Info: T exas Discrete Semiconductors In s tr u m e n ts Light Em itters Power Output /=n lr |r DCVK.C r»~. _ in n i. TyDe TIL23 TIL24 TIL25 TIL31 TIL33 TIL34 TIL32 mW 0.4 1.0 0.7 3.3 2.5 1,6 0.5 _ mA 50 50 50 100 100 100 20 VF OHr typ 35" 35 • 35’ 10" 80°
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til23til24til25til31+12til33til34til32til138til139til143til78til78 phototransistortil145til78 circuittil78 currenttil147
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TIL221
Abstract: TIL-220 TIL220 TIL222 TIL211 TIL224 TIL209 sda 5640 Texas Instruments, epoxy TIL216
Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s SDA 20 Ready-m ounted cards co n tain in g LS600 S ilicon sensor and th e spectrally m atched G allium Arsenide S ource Type TIL23 Parameter & Test Conditions Id max. leakage current VCE sensor 30V H - 0
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ls600til23200vasda20+14sda20/1sda20/2120-inch-diatil212til216til221til-220til220til222til211til224til209sda 5640texas instruments, epoxy
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TIL-220
Abstract: TIL220 TIL224 TIL209 TIL231-1 TIL224-1 TIL216 TIL271 TIL216-1 TIL228-2
Contextual Info: Optoelectronics Case Outlines Visible Light Emitting Diodes Device Type C olour of Light Lens Type TIL209 TIL212-1 TIL 212 -2 TIL216-1 TIL21 6-2 TIL220 TIL224-1 TIL22 4-2 TIL227-1 TIL22 7-2 TIL228-1 TIL22 8-2 T IL 2 3 1 -1 TIL23 1-2 TIL232-1 TIL23 2-2 TIL234-1
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TIL24
Abstract: infrared-emitting TIL24HR2 TIL23
Contextual Info: TEXAS INSTR 2SE OPTO 007SS4Ö D S TIL23, TIL24, TIL2S P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES 0 2 1 3 2 , F E B R U A R Y 1 9 7 0 - R E V 1 S E D A P R IL 1 9 8 7 DESIGN ED TO EMIT NEAR-INFRARED RADIATION W HEN FORW ARD BIASED Output Spectrally Compatible with Silicon Sensors
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007ss4til23til24til24hr2+365s3037s265infrared-emitting
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b57 diode
Abstract: M3245 M3244 diode 1123 07s BR211 BR211-100 M3243 BI 1123 M324
Contextual Info: 5bE D • 7110flSb 0G410 bD ÛÔ4 D E V E LO P M E N T DATA IPHIN T -M -2 L 3 - BR211 SERIES T h is data sheet contains advance Inform ation and specifications are subject to change w ith o u t notice. PHILIPS 5bE D ^ INTERN A T I O N A L UN BREAKOVER DIODES
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7110flsb0g410bdbr211br211-100+7b57 diodem3245m3244diode 1123 07sm3243bi 1123m324
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TIL78
Abstract: TIL139 til78 phototransistor TIL138 TIL32 TIL78 optoelectronics til145 TIL78 circuit TIL143 TIL146
Contextual Info: Optoelectronics 's Case Outlines Source and Sensor Assemblies On-state Collector Current Device Type Type mm. IF mA VCE 10/<A 35 15 40 200/<A 50 ftA 20 20 0.5 0.5 5 10 100 2 16 50 1 100 1 100 20 5 5 100 100 lC o n mA TIL138 One-channft! transmissive assembly^
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til138til139til143til144+10til145til146til147til14810/iatil78til78 phototransistortil32til78 optoelectronicstil78 circuit
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MV5253
Abstract: MV5352 MV5056 MV5252 MV5050 MV5051 MV5052 MV5053 MV5054-1 MV5054-2
Contextual Info: 1-4 LED V isib le Lam ps C o n t’d Max F orw a rd C u rre n t mA 100 T yp ica l Lum inous in te n s ity m cd T yp ica l F o rw a rd V olta ge @ Ip = 20 mA V Data Sheet Page No. 2.0 @ 20 mA 1.7 2-25 D evice No. Lens C h a ra c te ris tic MV5050 Clear Point Source
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mv5050mv5051mv5052mv5053+9mv5054-1mv5054-2mv5054-3mv5055mv5056mv5152mv5253mv5352mv5252
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MV5051
Abstract: MV5050 MV5052 MV5053 MV5054-1 MV5054-2 MV5054-3 MV5055 MV5056 MV5152
Contextual Info: 1-4 LED Visible Lamps Cont’d Max Forward Current mA 100 Typical Luminous intensity mcd Typical Forward Voltage @ Ip = 20 mA V Data Sheet Page No. 2.0 @ 20 mA 1.7 2-25 Device No. Lens C haracteristic MV5050 Clear Point Source MV5051 Clear Diffused 100 1.6 @ 20 mA
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5082-4486
Abstract: MV5253 4480 MV5050 MV5051 MV5052 MV5053 MV5054-1 MV5054-2 MV5054-3
Contextual Info: 1-4 LED Visible Lamps Cont’d Max Forward Current mA 100 Typical Luminous intensity mcd Typical Forward Voltage @ Ip = 20 mA V Data Sheet Page No. 2.0 @ 20 mA 1.7 2-25 Device No. Lens Characteristic MV5050 Clear Point Source MV5051 Clear Diffused 100 1.6 @ 20 mA
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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AR1310
Abstract: AR3010 AR9102 AR1303 ms 25237-327 Telefunken TLX 22 4 G5602 MV55A rca 7646 RCA 7945
Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 60089 708-459-3400 Fax 708-459-2708 _ «OHI C hicago M iniature WHERE INNOVATION COMES TO LIGHT C o m p e titiv e Cross R e fe re n c e Competitor Page
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tly114aqtly118ptly123tly124+15tly132tly133atly134atly143tly144ar1310ar3010ar9102ar1303ms 25237-327telefunken tlx 22 4g5602mv55arca 7646rca 7945
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TIL601-604
Abstract: isocom
Contextual Info: ISOCOM LTD TIL601-604 SILICON PHOTOTRANSISTOR Isocom Ltd supplies high reliability devices for applications requiring an operating temperature range of -55°C to +125°C eg. military applications . Devices supplied are approved to BS9400, and have completed rigorous testing. Various high reliability
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1971-REVISED
Abstract: 521 opto phototransistor array TIL135
Contextual Info: TEXAS INSTR OPTO BSE D flcit il7 2 t i 0Q7SSb0 3 TIL134 THRU TIL136 12-ELEMENT ARRAYS AND 12-CHANNEL PAIR D1093.SEPT6MBER 1971—REVISED SEPTEMBER 1989 TIL134 . . . 12-ELEMENT GALLIUM ARSENIDE IRED ARRAY TIL135 . . . 12-ELEMENT PHOTOTRANSISTOR ARRAY TIL136. . . 12-CHANNEL PAIR
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til134til13612-element12-channel+6d10931971--revisedtil1351971-revised521 optophototransistor array
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1N5722
Abstract: 1N572 TIL24
Contextual Info: 1N5722 THRU 1N5725 N-P-IY PLANAR SILICON PHOTOTRANSISTORS D974, M A R C H 1 9 7 2 - R E V I S E D A P R IL 198/ J E D E C - R E G IS T E R E D V E R S IO N S O F TIL60 1 TH R U T IL 6 0 4 • Recommended for Application in Character Recognition, Tape and Card
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monsanto LED
Abstract: Monsanto MV5054-1 MV5054-2 MV5054-3 MV5050 MV5051 MV5052 MV5053 MV5055
Contextual Info: 1-4 LED V isib le Lam ps C o n t’d Max F orw a rd C u rre n t mA 100 T yp ica l Lum inous in te n s ity m cd T yp ica l F o rw a rd V olta ge @ Ip = 20 mA V Data Sheet Page No. 2.0 @ 20 mA 1.7 2-25 D evice No. Lens C h a ra c te ris tic MV5050 Clear Point Source
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mv5050mv5051mv5052mv5053+8mv5054-1mv5054-2mv5054-3mv5055mv5056mv5152monsanto ledmonsanto
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FLV310
Abstract: MV5054 FLV110 FLV112 FLV410 FLV510 MV5050 MV5051 MV5052 MV5053
Contextual Info: A80RN ELECTRONICS S3E » • O O T'îblM OOOQGM4 Tfl? B A B E LED Lamps PKG OUTLINE LENS DESIGN TYPICAL INTENSITY MCD FORWARD VOLTAGE (TYP) Red Diffused 2.0@20mA 1.8 Water Clear 2.0@20mA 1.8 FLV112 Milky Diff. 2.0020mA 1.8 FLV310 High Eff.Green Green Diff.
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a80rnooodd44flv1100020ma+10flv112flv3102020maflv410flv510mv5050mv5054mv5051mv5052mv5053
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TIL136
Abstract: D1093 Infrared Emitters TIL134
Contextual Info: TIL134 THRU TIL136 12-ELEMENT ARRAYS AND 12-CHANNEL PAIR D1093, SEPTEMBER 1971—REVISED SEPTEMBER 1989 TIL134 . . 12-ELEMENT GALLIUM ARSENIDE IRED ARRAY TIL135 . . . 12-ELEMENT PHOTOTRANSISTOR ARRAY TIL136 . . . 12-CHANNEL PAIR • Center-to-Center Spacing of 6,3 mm 0.250 inch for Tape Reading
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TRANSISTOR ED203
Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
Contextual Info: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the
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1n2175transistor ed203fnd10man-3a+72n3980la 4301do ic 4532a freegermaniumgermanium drift transistortexas instruments led display tilepitaxial mesa
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1n57221n57231n57241n5725+161n62641n62651n62662004-90xx2600-70xx2n5777-80h0a0872-n55h0a1405-1h0a0865-l51h0a1405hoa708-1hoa9til78 phototransistormoc70t3ir diode til38h0a1874-12
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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808 nm 100 mw
Abstract: MV5050 MV5051 MV5052 MV5053 MV5054-1 MV5054-2 MV5054-3 MV5055 MV5056
Contextual Info: 1-4 LED Visible Lamps Cont’d Max Forward Current mA Device No. Lens Characteristic MV5050 Clear Point Source 100 Typical Luminous intensity mcd Typical Forward Voltage @ Ip = 20 mA V Data Sheet Page No. 2.0 @ 20 mA 1.7 2-25 MV5051 Clear Diffused 100 1.6 @ 20 mA
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mv5050mv5051mv5052mv5053+7mv5054-1mv5054-2mv5054-3mv5055mv5056mv5152808 nm 100 mw
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