CY7C1007 Search Results

tfk 825

Contextual Info: 1M x 1 Static RAM Features Functional Description • High speed T he CY7C1007 is a high-perform ance C M O S static R A M organized as 1,048,576 w ords by 1 bit. Easy m em ory expansion is provided by an active LO W chip enable C E and th ree-state drivers.

Contextual Info: fax id: 1058 CY7C107 CY7C1007 w / C Y P R E S S 1M x 1 Static RAM memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.

automatic change over switch circuit diagram

Abstract: CY7C1007 CY7C1007-12PC CY7C1007-12VC CY7C1007-15PC R1480
Contextual Info: 1CY 7C10 07 PRELIMINARY CY7C1007 1M x 1 Static RAM Features is provided by an active LOW chip enable CE and three-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed

CY7C1007D-10VXI

Abstract: CY7C107D CY7C107D-10VXI
Contextual Info: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 80 mA @ 10 ns • Low CMOS Standby Power The CY7C107D and CY7C1007D are high-performance

CY7C1007B

Abstract: CY7C107B
Contextual Info: 07B CY7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).

transistor 107A equivalent

Abstract: CY7C1007 CY7C107
Contextual Info: CY7C107 CY7C1007 1M x 1 Static RAM Features memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed

CY7C1007

Contextual Info: 05 MbE I • l M x l Static R/W RAM Features Functional Description • H ighspeed — Iaa = 15 ns T he CY7C1007 is a high-performance CMOS static RAM organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW chip enable CE) and three-state drivers. T he device

A14C

Abstract: 6A17
Contextual Info: CY7C1007 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Features Functional Description • High speed T he CY7C1007 is a high-perform ance C M O S static RAM organized as 1,048,576 w ords by 1 bit. Easy m em ory expansion is p rovided by an active LO W chip enable

Contextual Info: CY7C107BN CY7C1007BN 1M x 1 Static RAM Features Functional Description The CY7C107BN and CY7C1007BN are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. These devices have an

tPD10

Contextual Info: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Features Functional Description[1] • Pin- and function-compatible with CY7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 60 mA @ 10 ns • Low CMOS Standby Power • • • •

CY7C107B-25VC

Abstract: CY7C1007B CY7C107B
Contextual Info: 07B CY7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).

CY7C107B-15VC

Abstract: CY7C1007B CY7C107B
Contextual Info: 1CY7C107B CY7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).

Contextual Info: '/ CYPRESS 1M x 1 Static RAM Features Functional Description • High speed — U a = 12 ns The CY7C1007 is a high-performance CMOS static RAM organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW chip enable CE and three-state drivers.

Contextual Info: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/CY7C1007B ■ High speed The CY7C107D and CY7C1007D are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy

Contextual Info: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 80 mA @ 10 ns • Low CMOS Standby Power The CY7C107D and CY7C1007D are high-performance

Contextual Info: CY7C107D CY7C1007D 1-Mbit 1 M x 1 Static RAM 1-Mbit (1 M × 1) Static RAM Features Functional Description • Pin- and function-compatible with CY7C107B/CY7C1007B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC ■ The CY7C107D [1] and CY7C1007D [1] are high-performance

Contextual Info: PRELIMINARY CY7C1007 IM x 1 Static RAM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 275 mW • 2.0V data retention optional — 100 ^iW • Automatic power-down when

CY7C1007D-10VXI

Abstract: CY7C107D CY7C107D-10VXI
Contextual Info: CY7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 80 mA @ 10 ns • Low CMOS Standby Power The CY7C107D and CY7C1007D are high-performance

CY7C1007

Abstract: CY7C107
Contextual Info: fax id: 1058 w / CY7C107 CY7C1007 C Y P R E S S 1M x 1 Static RAM Features memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.

Contextual Info: CY7C1007 PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 275 mW • 2.0V data retention 100 iW • Automatic power-down when

CY7C1006

Contextual Info: Cypress Semiconductor Qualification Report QTP# 97411 VERSION 1.0 January, 1998 1 Meg SRAM 5% Shrink , R32D Technology, Fab 4 CY7C106/CY7C1006 256K x 4 SRAM (28 Pins-400/300 mil SOJ) CY7C107/CY7C1007 1M x 1 SRAM CY7C109/CY7C1009 128K x 8 SRAM (32 Pins-400/300 mil SOJ)

Contextual Info: 7c1007: 1 1 -2 5 -9 1 Revision: Monday, December 2 1 ,1992 ^?1A R S3 1983 CY7C1007 PRELIMINARY CYPRESS '. SEMICONDUCTOR 1M x 1 Static RAM Features Functional Description • H ighspeed — tAA — 12 ns • CMOS for optimum speed/power • Low active power

CY7C1007BN-15VC

Abstract: CY7C1007BN-15VXC CY7C107BN CY7C107BN-15VC CY7C107BN-15VI
Contextual Info: CY7C107BN CY7C1007BN 1M x 1 Static RAM Features Functional Description The CY7C107BN and CY7C1007BN are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. These devices have an

Contextual Info: CY7C107D CY7C1007D 1-Mbit 1 M x 1 Static RAM 1-Mbit (1 M × 1) Static RAM Features Functional Description • Pin- and function-compatible with CY7C107B/CY7C1007B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC ■ The CY7C107D [1] and CY7C1007D [1] are high-performance