CY62137V Search Results

A15C

Abstract: CY62137V CY62137V18 CY62137VLL-70BAI CY62137VLL-70ZI CY62137
Contextual Info: CY62137V MoBL CY62137V18 MoBL2™ CYPRESS 1 2 8 K x 1 6 S ta tic R A M Features are placed in a h igh -im pe da nce state w h en : de selected CE HIG H , ou tputs are disabled (OE HIG H), BHE and BLE are disabled (B H E , BLE HIG H), o r during a w rite op era tion (CE

Contextual Info: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected

Contextual Info: PRELIMINARY CY62137V MoBL 128K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: — 1.8V–3.3V • Ultra-low active, standby power • Easy memory expansion with CE and OE features

CY62137CV

Abstract: CY62137CV30LL CY62137CV33LL CY62137CVSL CY62137V fbga 12 x 12 thermal resistance
Contextual Info: CY62137CV30/33 MoBL CY62137CV MoBL® 2-Mbit 128K x 16 Static RAM Features • Very high speed — 55 ns • Temperature Ranges — Industrial: - 40°C to + 85°C — Automotive: - 40°C to + 125°C • Pin-compatible with the CY62137V • Ultra-low active power

VDR 0047

Abstract: CY62137V CY62137VSL
Contextual Info: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C • • • • • • • • — Automotive: –40°C to 125°C High Speed: 55 ns and 70 ns Wide voltage range: 2.7V–3.6V

55BA

Abstract: ultra fine pitch BGA CY62137V CY62137VLL-55ZI
Contextual Info: 37V18 CY62137V MoBL 128K x 16 Static RAM Features high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). • Low voltage range: — CY62137V: 2.7V–3.6V

62137A

Contextual Info: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell

VDR 0047

Abstract: CY62137V
Contextual Info: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected

CY62137V

Abstract: CY62137V18 CY62137VLL-55ZI CY62137VLL-70ZI
Contextual Info: 1*CY62137V18 MoBL2 CY62137V MoBL™ 128K x 16 Static RAM Features high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). • Low voltage range:

CY62137

Contextual Info: CY62137V MoBL 128K x 16 Static RAM Features high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). • Low voltage range: — CY62137V: 2.7V–3.6V

CY62137V

Abstract: CY62138V
Contextual Info: Cypress Semiconductor Qualification Report QTP# 99075 VERSION 1.0 April, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Cypress Semiconductor

Contextual Info: CY62137V MoBL CY62137V18 MoBL2™ 128K x 16 Static RAM Features are placed in a high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

Contextual Info: CY62137V MoBL 2M 128K x 16 Static RAM Features • • • • • • • • High Speed: 55 ns and 70 ns Wide voltage range: 2.7V–3.6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs

Contextual Info: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected

cy62137fv30ll-45bvxi

Abstract: CY62137
Contextual Info: CY62137FV30 MoBL PRELIMINARY 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62137CV/CV25/CV30/CV33, CY62137V, CY62137EV30 • Ultra-low standby power

Contextual Info: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected

CY62137V

Abstract: CY62137V18
Contextual Info: CY62137V MoBL CY62137V18 MoBL2™ 128K x 16 Static RAM Features are placed in a high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

VDR 0047

Abstract: CY62137VN CY62137VNLL
Contextual Info: CY62137VN MoBL 2-Mbit 128K x 16 Static RAM Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C — Automotive-E: –40°C to 125°C • High Speed: 55 ns • Wide voltage range: 2.7V–3.6V • Ultra-low active, standby power

CY62137VLL-70ZI

Abstract: WE 251 A15C CY62137V CY62137VLL-70BAI
Contextual Info: / CYPRESS PRELIMINARY CY62137V MoBL 1 2 8 K x 1 6 S t a t ic R A M disabled B H E , B LE HIGH , or during a write operation (CE LOW, and W E LOW). Features • Low voltage range: -1 .8 V -3 .3 V • Ultra-low active, standby power • Easy memory expansion with C E and OE features

CY62135V18

Abstract: CY7C1329 8355F
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 003108 VERSION 1.0 December 2000 2 Meg FCP MoBL2  SRAM Family R52D-3, Fab 4 CY62135V18 CY62136V18/CY62137V18 128K x 16 Static RAM MoBL  and More Battery life are Trade mark of Cypress Semiconductor Corporation.

CY62137CV

Abstract: CY62137CV30LL CY62137CV33LL CY62137CVSL CY62137V CY62137CVSL-70BAXI
Contextual Info: CY62137CV30/33 MoBL CY62137CV MoBL® 2-Mbit 128K x 16 Static RAM Features • Very high speed — 55 ns • Temperature Ranges — Industrial: - 40°C to + 85°C — Automotive: - 40°C to + 125°C • Pin-compatible with the CY62137V • Ultra-low active power

Contextual Info: CY62137VN MoBL 2-Mbit 128K x 16 Static RAM Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C — Automotive-E: –40°C to 125°C • High Speed: 55 ns • Wide voltage range: 2.7V–3.6V • Ultra-low active, standby power

Contextual Info: CY62137FV30 MoBL 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62137CV/CV25/CV30/CV33, CY62137V, CY62137EV30 • Ultra-low standby power — Typical standby current: 1 µA

BAI 59

Abstract: plaskon FBGA PACKAGE thermal resistance
Contextual Info: Cypress Semiconductor Package Qualification Report 000201 VERSION 1.0 October, 2000 48 Fine Pitch Ball Grid Array FBGA Level 3 7mm x 7 mm Cypress Philippines Assembly CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432-7069