CY61257 Search Results

Contextual Info: fax id: 1087 CY61257 256K RAM/2M ROM that reduces power consumption by more than 99% when de­ selected. Featu res • 1.8V-3.3V operation • 32K x 8 RAM and 256K x 8 Mask ROM combination memory • ROM speed — 250 ns Reading from the RAM is accomplished by taking RAMCS and

KMC-184

Abstract: JESD22 KMC184
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97294 VERSION 1.0 January, 1998 32K x 8 SRAM / 2 Meg ROM CY61257R2*V0/CY61256R2*V0 Cypress Semiconductor 32K x 8 SRAM/2 Meg ROM - R32 Technology Device: CY61257R202V0 Package: Small TSOP QTP# 97294, V. 1.0

CY61257

Abstract: ZA32
Contextual Info: fax id: 1087 1CY 612 56 CY61257 PRELIMINARY 256K RAM/2M ROM that reduces power consumption by more than 99% when deselected. Features • 1.8V–3.3V operation • 32K x 8 RAM and 256K x 8 Mask ROM combination memory • ROM speed — 250 ns • RAM Speed

verilog for SRAM 512k word 16bit

Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18

Contextual Info: W CYPRESS 256K RAM/2M ROM that reduces power consumption by more than 99% when de­ selected. Features • 1.8V -3.3V operation • 32K x 8 RAM and 256K x 8 Mask ROM combination memory • ROM speed — 250 ns Writing to the RAM is accomplished by taking RAMCS and

CY61257

Abstract: ZA32
Contextual Info: fax id: 1087 W CYPRESS • 1.8V -3.3V operation • 32K x 8 RAM and 256K x 8 Mask ROM combination memory • ROM speed — 250 ns Writing to the RAM is accomplished by taking RAMCS and write enable WE inputs LOW and ROMCS HIGH. Data on the eight I/O pins (l/O 0 through l/0 7) is then written into the RAM