ZA32 Search Results

ZA32

Contextual Info: Package Diagram Small Thin Small Outline Packages 32-Lead Small Thin Small Outline Package ZA32 1

ZA32

Contextual Info: Package Diagram Shrunk Thin Small Outline Package 32-Lead Shrunk Thin Small Outline Package ZA32 51-85094 1

ZA32

Contextual Info: Package Diagram Shrunk Thin Small Outline Package 32-Lead Shrunk Thin Small Outline Package 8x13.4 mm ZA32 51-85094-*D 1

Contextual Info: Package Diagram Shrunk Thin Small Outline Package 32-Lead Shrunk Thin Small Outline Package ZA32 51-85094-B 1

ADZ 12

Abstract: ZA32
Contextual Info: fax id: 1086 ^;aaazgg s t risaliiJF ;U I FlmCbti CY61256 PRELIMINARY 256K RAM/2M ROM Features tha t reduces po w e r con sum p tion by m ore than 99% when de ­ selected. • 1 .8 V -3 .3 V o p e ratio n • 32K x 8 RA M and 256K x 8 M ask RO M co m b in a tio n

Contextual Info: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features

automatic change over switch circuit diagram

Abstract: free circuit diagram of rom pdf download RAM circuit diagram ZA32
Contextual Info: fax id: 1085 1CY 612 56 CY61128 PRELIMINARY 1M RAM/2M ROM Features that reduces power consumption by more than 99% when deselected. • 1.8V–3.3V operation • 128K x 8 RAM and 256K x 8 Mask ROM combination memory • ROM speed — 250 ns • RAM Speed — 500 ns

Contextual Info: fax id: 1086 CY61256 256K RAM/2M ROM that reduces power consumption by more than 99% when de­ selected. Featu res • 1.8V -3.3V operation • 32K x 8 RAM and 256K x 8 Mask ROM combination memory • ROM speed Writing to the RAM is accomplished by ta king RAMCS and

Contextual Info: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Functional Description Features The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This

CY62128BLL-55SI

Abstract: CY62128B CY62128BLL-70SI
Contextual Info: CY62128B MoBL 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE1 ,

Contextual Info: CY62128E MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

ZA32

Contextual Info: fax id: 1086 1CY 612 56 CY61256 PRELIMINARY 256K RAM/2M ROM Features that reduces power consumption by more than 99% when deselected. • 1.8V–3.3V operation • 32K x 8 RAM and 256K x 8 Mask ROM combination memory • ROM speed — 250 ns • RAM Speed

CY62128VL-70ZI

Abstract: CY62128V CY62128V18 CY62128V25 ZA32
Contextual Info: amily CY62128V Family 128K x 8 Static RAM Features LOW Output Enable OE and three-state drivers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V family is available in the standard 450-mil-wide

Contextual Info: CY62128E MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

ZA32

Abstract: CY61128 ADZ 12
Contextual Info: fax id: 1085 risaliiJF ;U I Flmcbti S S i^ K JS f F T V f S T “ ¿N &*• CY61128 PRELIMINARY 1M RAM /2M ROM Features that reduces power consumption by more than 99% when de­ selected. • 1.8V -3.3V operation • 128K x 8 RAM and 256K x 8 Mask ROM combination

Contextual Info: CY62128DV30 1-Mb 128K x 8 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip

CY62128VLL-55ZAI

Abstract: CY62128V CY62128VLL-55SC CY62128VLL-55ZI CY62128VLL-70SC
Contextual Info: 28V CY62128V 128K x 8 Static RAM Features automatic power-down feature, reducing the power consumption by over 99% when deselected. The CY62128V is available in the standard 450-mil-wide SOIC, 32-lead TSOP-I, 32-lead Reverse TSOP-1, and STSOP packages. • High Speed

A5 GNC

Abstract: 62128b-55 CY62128BLL CY62128B CY62128BLL-55SC CY62128BLL-55SI CY62128BLL-55ZI 62128B-70 62128b70
Contextual Info: CY62128B MoBL 128K x 8 Static RAM Features automatic power-down feature that reduces consumption by more than 75% when deselected. • 4.5V – 5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 82.5 mW (max.) (15 mA)

A12C

Abstract: A14C A15C CY62128V CY62128V18 CY62128V25
Contextual Info: fax id: 1 078 CY62128V Family 128K x 8 Static RAM Features three -state drivers. T hese devices have an au tom atic pow er-dow n feature, reducing the pow er con sum p tion by ove r 99% w h en de selected. T he C Y 6 21 28V fam ily is available in the stan dard 4 5 0 -m il-w id e SOIC, TSOP, and S T S O P packages.

05300

Abstract: CY62128BLL-55SXI A5 GNC CY62128BLL-55SXC TSOP 87 CY62128B CY62128BLL-55ZXI
Contextual Info: CY62128B MoBL 128K x 8 Static RAM Functional Description[1] Features • Temperature Ranges The CY62128B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE1 , an active HIGH Chip Enable (CE2), an active LOW Output

Contextual Info: CY62128EV30 MoBL 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features

CY62148CV25

Abstract: CY62148CV30 CY62148CV33 CY62148DV30 CY62148DV30L CY62148DV30L-55BVI CY62148DV30LL
Contextual Info: ADVANCE INFORMATION CY62148DV30 512K x 8 MoBL Static RAM Features • Very high speed: 55 ns — Wide voltage range: 2.20V 1– 3.60V • Pin-compatible with CY62148CV25, CY62148CV30, and CY62148CV33 • Ultra low active power — Typical active current:1.5 mA @ f = 1 MHz

Contextual Info: oBL CY62128B MoBL™ 128K x 8 Static RAM Features power-down feature that reduces power consumption by more than 75% when deselected. • 4.5V–5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 82.5 mW (max.) (15 mA)