schottky diode high voltage
Abstract: diode schottky 29 1N6263 diode 29 CMDD6263 CMKD6263 CMLD6263 CMOD6263 CMPD6263 CMSD6263
Contextual Info: PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
|
Original
|
cpd92vcmdd6263cmkd6263cmld6263+8cmod6263cmpd6263cmsd6263cmud62631n6263schottky diode high voltagediode schottky 29diode 29
|
PDF
|
"Schottky Diode"
Abstract: 1N6263 Schottky diode Die Schottky diode wafer CMOD6263 CMPD6263 CMSD6263 CPD92V CMDD6263 CMKD6263
Contextual Info: PROCESS CPD92V Schottky Diode High Voltage Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 9.0 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 4.8 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å
|
Original
|
cpd92vcmdd6263cmkd6263cmld6263+8cmod6263cmpd6263cmsd6263cmud62631n6263schottky diodeschottky diode dieschottky diode wafer
|
PDF
|
CP588V
Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
Contextual Info: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.
|
Original
|
cpd48cpd76cpd78cpd80+10cpd83cpd88cpd91cpd92cpd96cp188cp588vcp-392vcp307cp191
|
PDF
|
BF244 datasheet
Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216
|
Original
|
1n456cpd641n456a1n457+121n457a1n458bf244 datasheet2n5133 equivalentmps5771bd345bd347bf2442n5248bf2562n33042n5910
|
PDF
|
