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Contextual Info: CMUT3410 NPN CMUT7410 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY LOW VCE SAT SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT3410, and CMUT7410, are low VCE(SAT) silicon transistors in an ULTRAmini surface mount package designed for
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marking code c43
Abstract: amplifier marking code a marking c43 complementary npn-pnp complementary npn-pnp power transistors Surface mount NPN/PNP complementary transistor CMUT3410 CMUT7410 Marking codes c43 code
Contextual Info: Central CMUT3410 NPN CMUT7410 PNP Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY LOW VCE SAT SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT3410, and CMUT7410, are low VCE(SAT) silicon transistors in an ULTRAmini⢠surface mount
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cmut3410cmut7410ot-523500ma+9100mhzmarking code c43amplifier marking code amarking c43complementary npn-pnpcomplementary npn-pnp power transistorssurface mount npn/pnp complementary transistormarking codesc43 code
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c43 *pn
Abstract: marking C43
Contextual Info: CMUT3410 NPN CMUT7410 PNP SURFACE MOUNT COMPLEMENTARY LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT3410, and CMUT7410, are low VCE(SAT) silicon transistors in an ULTRAmini surface mount package designed for
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cmut3410cmut7410ot-523800ma+4100ma500mac43 *pnmarking c43
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marking c43
Abstract: CMUT3410 CMUT7410
Contextual Info: CMUT3410 NPN CMUT7410 PNP SURFACE MOUNT COMPLEMENTARY LOW VCE SAT SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT3410, and CMUT7410, are low VCE(SAT) silicon transistors in an ULTRAmini surface mount package designed for
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CMLT3410
Abstract: CMPT3410 CMST3410 CMUT3410 CP341V CXT3410
Contextual Info: PROCESS CP341V Small Signal Transistors NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization
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a42e
Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Contextual Info: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless
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od-923ot-923ot-953od-523+16ot-523ot-563od-323ot-323ot-363od-123a42eic 7410sot-89 a63czt900knpn 2907a2222aa77 sot232222aea92e3906 npn
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BF244 datasheet
Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216
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1n456cpd641n456a1n457+121n457a1n458bf244 datasheet2n5133 equivalentmps5771bd345bd347bf2442n5248bf2562n33042n5910
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transistor
Abstract: CMLT3410 CMPT3410 CMST3410 CMUT3410 CP341V chip die npn transistor
Contextual Info: PROCESS CP341V Small Signal Transistors NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization
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cp341vcmlt3410cmpt3410cmst3410+3cmut3410transistorchip die npn transistor
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CMLT3410
Abstract: CMPT3410 CMST3410 CMUT3410 CP341V CXT3410
Contextual Info: PROCESS CP341V Small Signal Transistors NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization
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